Journal ArticleDOI
The growth and transformation of Pd2Si on (111), (110) and (100) Si
G.A. Hutchins,A. Shepela +1 more
TLDR
In this paper, the authors describe a diffusion-controlled growth of Pd2Si on amorphous Si substrates with a t 0.5 dependence on the substrate orientation.About:
This article is published in Thin Solid Films.The article was published on 1973-11-01. It has received 111 citations till now. The article focuses on the topics: Thin film & Layer by layer.read more
Citations
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Kinetics of interfacial reaction in bimetallic CuSn thin films
King-Ning Tu,R. D. Thompson +1 more
TL;DR: In this paper, the formation of Cu6Su5 between Cu and Sn thin films at room temperature and of Cu3Sn between Cu6Sn5 and Cu at temperatures from 115° to 150°'C were measured by Rutherford backscattering spectroscopy and glancing-incidence X-ray diffraction.
Journal ArticleDOI
Kinetics of formation of silicides: A review
François M. d'Heurle,P. Gas +1 more
TL;DR: In this paper, the authors classified the kinetics of silicide growth into three different categories: diffusion controlled, nucleation controlled, and reaction rate controlled, with the aim of understanding both the phenomenology of growth and the specific atomic mechanisms of phase formation.
Journal ArticleDOI
Nucleation of a new phase from the interaction of two adjacent phases: Some silicides
TL;DR: In this paper, a class of reactions where nucleation dominates the formation of a new phase is discussed, and a salient feature of these reactions is the absence of any equilibrium temperature, although the nucleation temperatures are relatively well defined within narrow limits.
Journal ArticleDOI
Implanted noble gas atoms as diffusion markers in silicide formation
TL;DR: In this article, the displacement of noble gas atoms of Ar and Xe has been used as diffusion markers in growth studies of silicides formed by reacting metal films with silicon substrates, and two approaches were used: either the silicon samples were implanted with Xe or Ar and then covered with a thin layer of metal or the metal layer was implanted with the marker.
Journal ArticleDOI
Selective growth of metal‐rich silicide of near‐noble metals
TL;DR: In this paper, it has been shown that high interface mobility can be achieved by transforming Si atoms at the interface from covalent bonding to metallic bonding and the transformation can be induced by forming metal interstitials in Si.
References
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Journal ArticleDOI
Some aspects of the growth of diffusion layers in binary systems
TL;DR: In this paper, it was shown that the application of Fick's First law to polyphase diffusion in binary systems leads to simple but rigorous expressions for the interface positions as functions of time and temperature.
Journal ArticleDOI
The Structures of Ni6Si2B, Fe2P and Related Phases.
Journal ArticleDOI
Growth Kinetics Observed in the Formation of Metal Silicides on Silicon
R. W. Bower,J. W. Mayer +1 more
TL;DR: In this paper, the authors used backscattering of MeV He ions to investigate the composition and growth kinetics of metal silicides formed from thin films of Pd, Ti, Cr, and Mo evaporated onto Si.
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Diffusion in multicomponent metallic systems: i. phenomenological theory for substitutional solid solution alloys
TL;DR: Onsager's generalization of Fick's law for diffusion in multicomponent systems is examined with a view to determining the conditions imposed on the diffusion coefficients by the second law of thermodynamics as mentioned in this paper.