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Journal ArticleDOI

The phonon boundary scattering cross section at disordered crystalline interfaces: a simple model

D. Kechrakos
- 19 Mar 1990 - 
- Vol. 2, Iss: 11, pp 2637-2652
TLDR
In this paper, a formalism for the study of alloy disorder at crystalline interfaces on the phonon boundary scattering cross section is presented. But it is based on t-matrix scattering theory and allows for separation of coherent and incoherent parts of the reflection and transmission channels.
Abstract
The author presents a formalism for the study of the effects of alloy disorder at crystalline interfaces on the phonon boundary scattering cross section. The disordered region is treated within the coherent potential approximation adapted to the interface geometry. The formalism is based on t-matrix scattering theory and allows for separation of the coherent and incoherent parts of the reflection and transmission channels. The theory is developed for a single-phonon-branch model and numerical results are presented for a simple cubic interface.

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Citations
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Influence of Interfacial Mixing on Thermal Boundary Conductance Across a Chromium/Silicon

TL;DR: In this article, the effect of interdiffusion or mixing around the interface, which is generally ignored, must be taken into account when the characteristic lengths of the devices are on the order of the thickness of this mixing region.
Journal ArticleDOI

Influence of Interfacial Mixing on Thermal Boundary Conductance Across a Chromium/Silicon Interface

TL;DR: In this article, a series of Cr films are grown on Si substrates subject to various deposition conditions to control the growth around the Cr/Si boundary, and the thermal boundary conductance (h BD ) is measured with the transient thermoreflectance technique.
Journal ArticleDOI

Surface roughness and thermal conductivity of semiconductor nanowires: Going below the Casimir limit

TL;DR: In this article, the authors quantitatively show that the thermal conductivity of Si nanowires can be lower than Casimir's classical limit for shallow surface roughness, even for nanowire diameters as thin as $222.
Journal ArticleDOI

Examining Interfacial Diffuse Phonon Scattering Through Transient Thermoreflectance Measurements of Thermal Boundary Conductance

TL;DR: In this paper, the effects of atomic mixing at the interface on thermal boundary conductance (h BD) were examined. But the experimental results were reviewed and a virtual crystal diffuse mismatch model was presented to add insight into the effect of interatomic mixing at interface.
Journal ArticleDOI

Tuning Phonon Transport: From Interfaces to Nanostructures

TL;DR: In this article, a review of recent experimental, computational, and theoretical studies that have highlighted potential methods for controlling phonon-mediated heat transfer is presented, as well as the emergent effects due to several interfaces in close proximity, such as in a multilayered structure or superlattice.
References
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Journal ArticleDOI

The theory and properties of randomly disordered crystals and related physical systems

TL;DR: A review of the methods for determining the behavior of solids whose properties vary randomly at the microscopic level, with principal attention to systems having composition variation on a well-defined structure (random "alloys") can be found in this paper.
Journal ArticleDOI

Wave scattering from rough surfaces

TL;DR: A review of the literature pertinent to wave scattering from rough surfaces is given in this paper, where the early techniques developed for this problem are discussed, including the perturbation technique and the Kirchhoff approximation.
Journal ArticleDOI

Scattering-theoretic approach to the electronic structure of semiconductor surfaces: The (100) surface of tetrahedral semiconductors and Si O 2

TL;DR: In this paper, a semi-empirical tight-binding Hamiltonian is used to calculate the electronic structure of semiconductor surfaces, which is based on the Koster-Slater idea for treating localized perturbations, which was later extended to describe surfaces.
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