The role of lattice dynamics in ferroelectric switching
TLDR
In this article , the fundamental role of lattice dynamics in ferroelectric switching was elucidated by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate.Abstract:
Reducing the switching energy of ferroelectric thin films remains an important goal in the pursuit of ultralow-power ferroelectric memory and logic devices. Here, we elucidate the fundamental role of lattice dynamics in ferroelectric switching by studying both freestanding bismuth ferrite (BiFeO3) membranes and films clamped to a substrate. We observe a distinct evolution of the ferroelectric domain pattern, from striped, 71° ferroelastic domains (spacing of ~100 nm) in clamped BiFeO3 films, to large (10's of micrometers) 180° domains in freestanding films. By removing the constraints imposed by mechanical clamping from the substrate, we can realize a ~40% reduction of the switching voltage and a consequent ~60% improvement in the switching speed. Our findings highlight the importance of a dynamic clamping process occurring during switching, which impacts strain, ferroelectric, and ferrodistortive order parameters and plays a critical role in setting the energetics and dynamics of ferroelectric switching. read more
Citations
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Journal ArticleDOI
Thin‐Film Ferroelectrics
Abel Fernández Fernández,Megha Acharya,Han-Gyeol Lee,Jesse Schimpf,Yizhe Jiang,Djamila Lou,Zishen Tian,Lane W. Martin +7 more
TL;DR: In this paper , a review of the evolution of ferroelectric thin-film research through the early days developing understanding of the roles of size and strain on ferroelectrics to the present day, where such understanding is used to create complex hierarchical domain structures, novel polar topologies and controlled chemical and defect profiles.
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Outstanding Ferroelectricity in Sol-Gel-Derived Polycrystalline BiFeO3 Films within a Wide Thickness Range.
TL;DR: In this paper , a protection layer was integrated in the sol-gel process to ensure the acquirement of remnant polarization of ∼65 μC/cm2 in ∼200 nm BiFeO3 thin films.
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Freestanding Complex-Oxide Membranes
TL;DR: In this paper , the authors review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
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Two-dimensional ferroelectrics from high throughput computational screening
M.C. Kruse,Urko Petralanda,Morten Niklas Gjerding,Karsten Wedel Jacobsen,Kristian Sommer Thygesen,Thomas Olsen +5 more
TL;DR: In this paper , a high throughput computational search for two-dimensional ferroelectric materials is reported, where the starting point is 252 pyroelectric material from the computational 2D materials database (C2DB) and from these, the authors identify 64 materials by explicitly constructing adiabatic paths connecting states of reversed polarization.
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Effect of cobalt substitution on the structural, ferroelectric, and magnetic properties of bismuth ferrite thin films
TL;DR: In this paper , the effect of structural transformation from rhombohedral to tetragonal phase with increasing cobalt substitution on the magnetic, electrical, and piezo-/ferroelectric properties is investigated.
References
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Book
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TL;DR: In this paper, the theory of ferroelectricity in terms of soft modes and lattice dynamics is developed and modern techniques of measurement, including X-ray, optic, and neutron scattering, infra-red absorption, and magnetic resonance.
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SrTi O 3 : An intrinsic quantum paraelectric below 4 K
Klaus Müller,H. Burkard +1 more
TL;DR: In this article, it was shown that the paraelectric phase stabilizes below 4 K with a very high dielectric constant and the crossover from classical to quantum behavior on lowering the temperature is discussed, and the coupling of the ferroelectric mode to acoustic ones is important.
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Domain Formation and Domain Wall Motions in Ferroelectric BaTi O 3 Single Crystals
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