Journal ArticleDOI
Theory of the Schottky barrier solar cell
P. T. Landsberg,C. Klimpke +1 more
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In this paper, a model of Schottky barrier solar cells with an interfacial layer is described, which takes into account more accurately than has been done so far the dependence of barrier height on the interfacial density of states and consequently the various potential drops in the cell.Abstract:
A model of Schottky barrier solar cells with an interfacial layer is described which takes into account more accurately than has been done so far the dependence of barrier height on the interfacial density of states $(D\_{\text{S}})$ and consequently the various potential drops in the cell. This improvement tends to yield higher predicted efficiencies for low values of $D\_{\text{S}}$. Also taken into account is the recombination traffic through the interfacial states. This effect is important at high values of $D\_{\text{S}}$ when it lowers the predicted efficiency. Recombination in the transition and bulk regions is also considered, but this does not have a very marked effect. Numerical results are given for a Au-SiO$\_{2}$-Si contact. A new effect - the possible fanning out of the quasi-Fermi levels for the interfacial states - is also noted.read more
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Physical aspects of ferroelectric semiconductors for photovoltaic solar energy conversion
Pilar Lopez-Varo,Luca Bertoluzzi,Juan Bisquert,Juan Bisquert,Marin Alexe,Mariona Coll,Jinsong Huang,J.A. Jiménez-Tejada,Thomas Kirchartz,Thomas Kirchartz,Riad Nechache,Federico Rosei,Yongbo Yuan +12 more
TL;DR: In this article, the authors provide a critical overview of the physical principles and mechanisms of solar energy conversion using ferroelectric semiconductors and contact layers, as well as the main achievements reported so far.
Journal ArticleDOI
An analytic model for the MIS tunnel junction
TL;DR: In this article, a comprehensive analytic model describing current flow in the MIS tunnel junction under steady-state conditions is developed, where the tunnel junction is viewed as imposing boundary conditions on the usual set of differential equations governing the electrostatic potential and carrier distributions within the semiconductor.
Journal ArticleDOI
Amorphous silicon MIS solar cells
TL;DR: In this paper, the Schottky barrier cell was used for large area solar cells with an insulating layer between the metal and semiconductor, which is tailored to compensate for the low work function of the cheaper barrier metal (nickel).
Journal ArticleDOI
The role of the interfacial layer in Schottky barrier solar cells
TL;DR: In this paper, the authors analyzed the current mechanism in a Schottky barrier solar cell under two approximations and showed that the efficiency of the cell increases at first with the interfacial layer thickness delta, and after acquiring a maximum value falls with a further increase of delta.
Journal ArticleDOI
Flexible perovskite solar cells based on the metal-insulator-semiconductor structure.
TL;DR: The metal-insulator-semiconductor (MIS) structure is applied to perovskite solar cells, in which the traditional compact layer TiO2 is replaced by Al2O3 as the hole blocking material to realize an all-low-temperature process.
References
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Journal ArticleDOI
Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes
H C Card,E H Rhoderick +1 more
TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Journal ArticleDOI
Band-to-Band Radiative Recombination in Groups IV, VI, and III–V Semiconductors (II)
Journal ArticleDOI
Contact Potential Difference Measurements by the Kelvin Method
TL;DR: In this article, the authors measured the contact potential differences between clean metallic surfaces produced by condensation from the vapour, by the vibrating condenser modification of the Kelvin method.
Journal ArticleDOI
Interfacial states spectrum of a metal-silicon junction
C. Barret,A. Vapaille +1 more
TL;DR: In this article, the interfacial states density has been explored as a function of energy over almost the whole of the forbidden gap for a MoSi junction, and over the upper half of a Cr ǫ n junction, over a frequency range of 10 Hz to 500 kHz and between 77 and 300°K.
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Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes
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