Proceedings ArticleDOI
Thermal modeling of BOX/DTI enclosed power devices with Green's function approach
Kai E. Moebus,Yves Zimmermann,G. Wedel,Michael Schroter +3 more
- pp 1-4
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TLDR
In this paper, a computationally efficient geometry dependent thermal model is presented that avoids the time and cost penalty of numerical thermal simulations and utilizes the Green's function approach in combination with mixed boundary conditions.Abstract:
Accurate thermal models for power devices are crucial due to the simultaneous introduction of deep trenches (DTI) and silicon on insulator (SOI) technology. A computationally efficient geometry dependent thermal model is presented that avoids the time and cost penalty of numerical thermal simulations and utilizes the Green's function approach in combination with mixed boundary conditions. The derived model is accurate (relative temperature error < 10%) and valid for dimensions ranging between 5µm and 200µm. The new model allows for on-the-fly calculations of the thermal resistance R th as well as thermal coupling coefficients for multi-finger devices, enabling predictive modeling and concurrent engineering.read more
Citations
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Journal ArticleDOI
Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors
TL;DR: In this paper, a strategy for compact modeling the static thermal coupling between the emitter fingers of SiGe heterojunction bipolar transistors (SiGe-HBTs) is described.
Proceedings ArticleDOI
Scalable compact modeling for SiGe HBTs suitable for microwave radar applications
TL;DR: The suitability of the compact model HICUM for a state-of-the-art Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology is evaluated with special emphasis on an efficient scalable modeling methodology as mentioned in this paper.
References
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Book
Conduction of Heat in Solids
H. S. Carslaw,John Conrad Jaeger +1 more
TL;DR: In this paper, a classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems, including boundary value maximization.
Journal ArticleDOI
Thermal conduction in doped single-crystal silicon films
TL;DR: In this paper, the authors measured the thermal conductivities along free-standing silicon layers doped with boron and phosphorus at concentrations ranging from 1×1017 to 3×1019 cm−3 at temperatures between 15 and 300 K.
Journal ArticleDOI
Spreading Resistance in Cylindrical Semiconductor Devices
TL;DR: In this paper, the potential distribution of the spreading resistance of cylindrical semiconductor components is analyzed in graphical form for a range of geometrical parameters applicable to many practical situations.
Journal ArticleDOI
Thermal properties of very fast transistors
R.C. Joy,E.S. Schlig +1 more
TL;DR: In this paper, a mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation.
Journal ArticleDOI
Secondary breakdown and hot spots in power transistors
R. Scarlett,W. Shockley +1 more