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Proceedings ArticleDOI

Thermal modeling of BOX/DTI enclosed power devices with Green's function approach

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TLDR
In this paper, a computationally efficient geometry dependent thermal model is presented that avoids the time and cost penalty of numerical thermal simulations and utilizes the Green's function approach in combination with mixed boundary conditions.
Abstract
Accurate thermal models for power devices are crucial due to the simultaneous introduction of deep trenches (DTI) and silicon on insulator (SOI) technology. A computationally efficient geometry dependent thermal model is presented that avoids the time and cost penalty of numerical thermal simulations and utilizes the Green's function approach in combination with mixed boundary conditions. The derived model is accurate (relative temperature error < 10%) and valid for dimensions ranging between 5µm and 200µm. The new model allows for on-the-fly calculations of the thermal resistance R th as well as thermal coupling coefficients for multi-finger devices, enabling predictive modeling and concurrent engineering.

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Citations
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Journal ArticleDOI

Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors

TL;DR: In this paper, a strategy for compact modeling the static thermal coupling between the emitter fingers of SiGe heterojunction bipolar transistors (SiGe-HBTs) is described.
Proceedings ArticleDOI

Scalable compact modeling for SiGe HBTs suitable for microwave radar applications

TL;DR: The suitability of the compact model HICUM for a state-of-the-art Silicon-Germanium (SiGe) heterojunction bipolar transistor (HBT) technology is evaluated with special emphasis on an efficient scalable modeling methodology as mentioned in this paper.
References
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TL;DR: In this paper, a classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems, including boundary value maximization.
Journal ArticleDOI

Thermal conduction in doped single-crystal silicon films

TL;DR: In this paper, the authors measured the thermal conductivities along free-standing silicon layers doped with boron and phosphorus at concentrations ranging from 1×1017 to 3×1019 cm−3 at temperatures between 15 and 300 K.
Journal ArticleDOI

Spreading Resistance in Cylindrical Semiconductor Devices

TL;DR: In this paper, the potential distribution of the spreading resistance of cylindrical semiconductor components is analyzed in graphical form for a range of geometrical parameters applicable to many practical situations.
Journal ArticleDOI

Thermal properties of very fast transistors

TL;DR: In this paper, a mathematical model of the three-dimensional transient heat flow problem is presented which takes into account the physical structure of the device and the actual region of power dissipation.
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