Journal ArticleDOI
Thermal resistance of heat sinks with temperature-dependent conductivity
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TLDR
Kirchhoff's transformation is summarised in a form appropriate for semiconductor-device heat sinks and then illustrated with a brief application to the thermal resistance of a GaAs laser.Abstract:
Kirchhoff's transformation is summarised in a form appropriate for semiconductor-device heat sinks and then illustrated with a brief application to the thermal resistance of a GaAs laser. Under the most common semiconductor boundary conditions his transformation immediately converts the steady-state linear temperature rise (based on a temperature-independent conductivity σ 0 ) of a uniform heat sink of any shape into the nonlinear rise [based on a temperature-dependent conductivity σ ( T ) of any functional form].read more
Citations
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Journal ArticleDOI
Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam
TL;DR: In this article, the temperature profiles induced by a cw laser beam in a semiconductor are calculated for an elliptical scanning beam and covers a wide range of experimental conditions, and the limiting case of a circular beam is also studied.
Journal ArticleDOI
Temperature rise induced by a laser beam II. The nonlinear case
TL;DR: In this paper, the steady state solution of the nonlinear heat-conduction equation when the thermal conductivity is strongly temperature dependent is expressed (for arbitrary geometry and heat source) in terms of the corresponding solution for the linear heatconduction case.
Journal ArticleDOI
Design considerations for high-current photodetectors
TL;DR: In this article, the design considerations for gigahertz-bandwidth, high-current p-i-n photodiodes utilizing InGaAs absorbers are discussed.
Journal ArticleDOI
CW measurement of HBT thermal resistance
D. Dawson,A. Gupta,M. Salib +2 more
TL;DR: In this paper, temperature dependence of beta and V/sub BE/ was measured on AlGaAs-GaAs HBTs and used to determine device thermal resistance, and the measurements were CW and not switched or pulsed in order to have a simpler procedure.
Journal ArticleDOI
A temperature-dependent nonlinear analytic model for AlGaN-GaN HEMTs on SiC
Jong-Wook Lee,Kevin J. Webb +1 more
TL;DR: In this article, a temperature-dependent large-signal model for continuous-wave (CW) and pulsed-mode operation is presented and applied to aluminum gallium nitride, gallium-nide (AlGaN-GaN) high electron-mobility transistors (HEMTs) on silicon-carbide (SiC) substrates.
References
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Book
Conduction of Heat in Solids
H. S. Carslaw,John Conrad Jaeger +1 more
TL;DR: In this paper, a classic account describes the known exact solutions of problems of heat flow, with detailed discussion of all the most important boundary value problems, including boundary value maximization.
Journal ArticleDOI
Advances in GaAs junction lasers with stripe geometry
TL;DR: A review of the properties of stripe geometry GaAs junction lasers is presented in this paper, where filaments, fabrication techniques, thermal design for continuous operation, modes and spontaneous pulsing are discussed.