Journal ArticleDOI
Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
Oliver Ambacher,Martin S. Brandt,Roman Dimitrov,T. Metzger,Martin Stutzmann,Roland A. Fischer,Alexander Miehr,Andreas Bergmaier,Günther Dollinger +8 more
TLDR
In this paper, the thermal stability of thin films of Group III nitrides prepared by low-pressure chemical vapor deposition from organometallic precursors was investigated by elastic recoil detection analysis (ERDA).Abstract:
We present results on the thermal stability as well as the thermally induced hydrogen, hydrocarbon, and nitrogen–hydrogen effusion from thin films of Group III nitrides prepared by low‐pressure chemical vapor deposition from organometallic precursors. We have deposited amorphous, polycrystalline, and epitaxial InN, GaN, and AIN films on (0001) Al2O3 substrates using the chemical reaction of azido[bis(3‐dimethylamino)propyl]indium, triethylgallium, and tritertiarybutylaluminium with ammonia. The substrate temperature was varied between 400 °C and 1100 °C. The elemental composition, in particular its dependence on the growth temperature, was investigated by elastic recoil detection analysis (ERDA). The influence of growth rate and crystallite size on the concentration of surface adsorbed hydrocarbons and carbon oxides is determined by a combination of ERDA and thermal desorption measurements. In addition, the stability of and the nitrogen flux from the InN, GaN, and AIN surfaces was determined by x‐ray diffraction and thermal decomposition experiments.read more
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Journal ArticleDOI
Gan : processing, defects, and devices
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
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When group-III nitrides go infrared: New properties and perspectives
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Journal ArticleDOI
Indium nitride (InN): A review on growth, characterization, and properties
TL;DR: In this paper, the authors reviewed the development of indium nitride (InN) semiconductors from its evolution to the present day and discussed the most popular growth techniques, metalorganic vapor phase epitaxy and molecular beam epitaxy.
Journal ArticleDOI
Toward Smart and Ultra-Efficient Solid-State Lighting
Jeffrey Y. Tsao,Mary H. Crawford,Michael E. Coltrin,Arthur J. Fischer,Daniel D. Koleske,Ganapathi S. Subramania,George T. Wang,Jonathan J. Wierer,Robert F. Karlicek +8 more
TL;DR: In this article, the current status of solid-state lighting relative to its ultimate potential to be "smart" and "ultra-efficient" is reviewed, and the long-term ultimate route to both might well be color-mixed RYGB lasers.