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Proceedings ArticleDOI

Transport spectroscopy of epitaxial graphene on SiC using quantum capacitances

TLDR
In this article, a high-mobility gated epitaxial graphene device is used for transport spectroscopy that exploits interplay between interface-state capacitance and graphene quantum capacitance reflecting the Dirac cone.
Abstract
What distinguishes graphene from conventional two-dimensional systems is its relativistic energy band structure referred to as the Dirac cone. Using a high-mobility gated epitaxial graphene device, we report transport spectroscopy that exploits interplay between interface-state capacitance and graphene quantum capacitance reflecting the Dirac cone [1]. This technique enables us to map out the energy structure of the relativistic graphene Landau levels (LLs) and thus to deduce disorder-induced LL broadening with simple transport measurements.

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Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition

TL;DR: In this article, a gate-all-around field effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode was developed, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3.
Proceedings ArticleDOI

Ultrafast microscopy captures the dynamics of bound excitons in twisted bilayer van der Waals materials

TL;DR: In this paper, the electronic structure of a single grain bilayer graphene was studied using multi-photon transient absorption microscopy and it was shown that upon resonant optical excitations, tBLG shows enhanced transient response with longer carrier compared to AB stacked bilayer bilayer graphite.
Journal ArticleDOI

Electrical tuning of the spin–orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition

TL;DR: In this paper, a gate-all-around field effect transistor was developed using a transparent conductive zinc oxide (ZnO) gate electrode, which is in situ atomic layer deposited after growth of a gate insulator of Al2O3.
References
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Journal ArticleDOI

Two-dimensional gas of massless Dirac fermions in graphene

TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Journal ArticleDOI

Experimental observation of the quantum Hall effect and Berry's phase in graphene

TL;DR: In this paper, an experimental investigation of magneto-transport in a high-mobility single layer of Graphene is presented, where an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene is observed.
Journal Article

Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene

TL;DR: An experimental investigation of magneto-transport in a high-mobility single layer of graphene observes an unusual half-integer quantum Hall effect for both electron and hole carriers in graphene.
Journal ArticleDOI

Half integer quantum Hall effect in high mobility single layer epitaxial graphene

TL;DR: In this article, the quantum Hall effect with a Berry phase of π is demonstrated on a single graphene layer grown on the C-face of 4H silicon carbide, which is a viable platform for graphene-based electronics.
Journal ArticleDOI

Non-volatile photochemical gating of an epitaxial graphene/polymer heterostructure.

TL;DR: A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure.
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