Journal ArticleDOI
Two‐photon processes in defect formation by excimer lasers in synthetic silica glass
TLDR
In this paper, the authors investigated defect formation in dehydrated silica glasses using various excimer lasers with different energies and found that the E' center probably originated from oxygen-deficient centers.Abstract:
Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E’ center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two‐photon process which makes band‐to‐band excitation possible. The E’ center probably originated from oxygen‐deficient centers. Contributions to the E’ center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low‐pressure mercury lamp.read more
Citations
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Journal ArticleDOI
Isoelectronic series of twofold coordinated Si, Ge, and Sn atoms in glassy SiO2: a luminescence study
TL;DR: In this paper, the spectral and particularly kinetic data show that in all cases luminescence centers with closely similar properties exist which constitute an isoelectronic series and attributed to defects, formed by electrically neutral twofold coordinated Si, Ge, and Sn atoms (T20 centers) in glassy SiO2.
Journal ArticleDOI
Effects of excimer laser irradiation on the transmission, index of refraction, and density of ultraviolet grade fused silica
TL;DR: In this paper, radiolytically induced UV absorption bands, an increase in index of refraction, and stress birefringence were observed in high purity fused silica during prolonged irradiation with a pulsed laser at 193 nm.
Journal ArticleDOI
The many varieties of E′ centers: a review
TL;DR: In this paper, three types of E′ centers with a spin state, S = 1 2, and with a G - tensor, G x ∼ G y ∼ 2.0018, were identified in the early reports on paramagnetic states in irradiated α-quartz.
Journal ArticleDOI
Shallow junction doping technologies for ULSI
Erin C. Jones,Emi Ishida +1 more
TL;DR: In this article, the motivation for shallow junctions, specific requirements for shallow junction used in deep sub-micron dimension metal-oxide-semiconductor field effect transistors (MOSFETs), current understanding of implant and diffusion processes, and the state-of-the-art in low energy implantation and a number of alternate doping technologies, including plasma implantation, gas-immersion laser (GILD) doping, rapid vapor-phase doping (RVD), ion shower doping, and decaborane (B10H14) implantation.
Journal ArticleDOI
Direct singlet-to-triplet optical absorption and luminescence excitation band of the twofold-coordinated silicon center in oxygen-deficient glassy SiO 2
TL;DR: A direct singlet-to-triplet optical absorption transition (S0→T1) in the twofold-coordinated silicon center (B2(Si) center) has been detected by time-resolved photoluminescence techniques as mentioned in this paper.
References
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Journal ArticleDOI
Oxygen vacancy model for the E1′ center in SiO2
TL;DR: In this paper, an (oxygen)- vacancy model of the E1-center in alpha quartz, featuring an asymmetric relaxation of the two silicons adjacent to the oxygen vacancy, is presented and analyzed.
Journal ArticleDOI
The band edge of amorphous SiO2 by photoinjection and photoconductivity measurements
T. H. DiStefano,D. E. Eastman +1 more
TL;DR: In this article, the interband gap of 9.0 eV in amorphous SiO2 was shown to be insensitive to band edge selection rules, and a gap of 8.9 ± 0.2 eV was seen in photoinjection measurements.
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Transmission, photoconductivity, and the experimental band gap of thermally grown Si O 2 films
TL;DR: In this article, the field dependence of photoconductivity and its similarity to internal photoemission was used to determine the band gap of amorphous Si${\mathrm{O}}_{2}$ films.
Journal ArticleDOI
Absolute two-photon absorption coefficients at 355 and 266 nm
TL;DR: The absolute two-photon absorption coefficients of uv-transmitting materials have been measured using well-calibrated single picosecond pulses, at the third and fourth harmonic of a mode-locked YAlG:Nd laser system as mentioned in this paper.
Journal ArticleDOI
Photoinduced paramagnetic defects in amorphous silicon dioxide
James H. Stathis,Marc Kastner +1 more
TL;DR: In this article, the intrinsic defects in amorphous SiO2 were discussed in terms of specific models for the intrinsic defect in a-SiO2. And the authors showed that the spectra of the dominant centers can be isolated by using their annealing, microwave power, and excitation-photon energy dependence.