Journal ArticleDOI
Ultra low resistance ohmic contacts to n-GaAs
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In this article, nonalloyed ohmic contacts to n-GaAs with contact resistances (ρc) below 1·0×10−7 Ω cm2 have been obtained using a Ge/GaAs heterojunction system.Abstract:
Nonalloyed ohmic contacts to n-GaAs with contact resistances (ρc) below 1·0×10−7 Ω cm2 have been obtained using a Ge/GaAs heterojunction system. Metals are evaporated on heavily arsenic-doped germanium (Ge) layers grown on GaAs. Low values of ρc result from the low Schottky barrier height (≈ 0·50 eV) and the high doping levels obtainable for n-Ge(≈ 1020 cm−3).read more
Citations
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A critical review of ohmic and rectifying contacts for silicon carbide
Lisa M. Porter,Robert F. Davis +1 more
TL;DR: In this article, the Schottky barrier heights (SBHs), thermal stability, and chemical reactions of SiC polytypes have been investigated for a wide band gap semiconductor.
Journal ArticleDOI
Solar cell contact resistance—A review
Dieter K. Schroder,D.L. Meier +1 more
TL;DR: An overview of metal-semiconductor contacts on solar cells is presented in this article, including the Schottky approach, Fermi level pinning by surface states, and the mechanisms of thermionic emission, thermionic/field emission, and tunneling for current transport.
Journal ArticleDOI
A comparison of semiconductor devices for high-speed logic
TL;DR: The bipolar transistor and FET are compared, considering both today's most advanced implementations and "ultimate" scaled-down devices, and the HEMT is considered a very promising candidate for high-speed logic.
Journal ArticleDOI
Tunneling hot electron transfer amplifiers (theta): Amplifiers operating up to the infrared
TL;DR: In this article, a family of novel three-terminal devices which rely on the transfer of a quasi-monoenergetic hot electron beam through a thin base is described.
Journal ArticleDOI
Characteristics of AuGeNi ohmic contacts to GaAs
TL;DR: In this article, the authors studied AuGeNi ohmic contacts to n-type MBE grown GaAs epitaxial-layer with doping in the (1016−1019) cm−3 range, and found several new effects: (a) contact resistivity exhibit a weak dependence on carrier concentration (much weaker than 1/ND depencence); (b) evidence for a high resistivity layer under the contact at least several thousands angstroms deep, which dominate the contact resistance in most cases; (c) a peripheral zone around the contact, about 1 μm
References
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Journal ArticleDOI
Ohmic contacts in GaAs
TL;DR: In this paper, the authors correlate the electrical effects observed in several significant recent developments with theory and interface chemistry to provide workers in the field with a physical understanding of what is essential for reproducible, effective, and reliable ohmic contacts.