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Ultraviolet laser system and method for forming vias in multi-layered targets

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TLDR
In this paper, the output of a continuously pumped, Q-switched, Nd:YAG laser (10) is frequency converted to provide ultraviolet light for forming vias (72, 74) in multi-layered targets (40).
Abstract
The output of a continuously pumped, Q-switched, Nd:YAG laser (10) is frequency converted to provide ultraviolet light (62) for forming vias (72, 74) in multi-layered targets (40). The parameters of the output pulses (62) are selected to facilitate substantially clean, simultaneous or sequential drilling or via formation in a wide variety of materials such as metals, organic dielectrics, and reinforcement materials having different thermal absorption characteristics in response to ultraviolet light. These parameters typically include at least two of the following criteria: high average power of greater than about 100 milliwatts measured over the beam spot area, a temporal pulse width shorter than about 100 nanoseconds, a spot diameter of less than about 50 microns, and a repetition rate of greater than about one kilohertz. The laser system (10) and method circumvent conventional depth of cut saturation limitations and can achieve an increased depth of cut per pulse in a target (40) formed of either single- or multi-layered material.

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References
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Method of fabricating a tapered via hole in polyimide.

TL;DR: In this paper, a method for fabricating a tapered via hole (16a) in a polyimide layer of an integrated circuit (10), including the steps of: disposing a layer of SiO2 (18) on the polyIMide layer (15), while simultaneously etching back the photoresist on the sidewalls of the opening to thereby uncover a strip (18a) adjacent to the perimeter of the exposed polyimides region (20), enlarging the exposed region of the polyimIDE (16) by etching (via etchant
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Compatibility of common MCM-D dielectrics with scanning laser ablation-via generation processes

TL;DR: In this article, a scanning laser ablation based via generation process for use in MCM-D (multichip module-D) substrate fabrication is described, and the robustness of a variety of thin (1-5 mu m-thick) conformal metal masking layers was compared by static exposure with a computer-controlled XeCl excimer laser exposure tool.
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Method for forming an integrated circuit package with via interconnection

TL;DR: In this paper, a method for forming the integrated circuit package, including a single layer or multilayer substrate in which interconnection vias are formed is described, where the laser energy is swept across a surface of a mask in which holes have been formed.
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Dopant-induced excimer laser ablation of Poly(tetrafluoroethylene)

TL;DR: In this article, excimer laser ablation of PTFE films containing 5, 10, and 15% polyimide (wt/wt) as a dopant was achieved at 308 nm in a fluence range of 1 to 12 J/cm2.
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TL;DR: A unitary micro-flexure structure and a method of making the same is described in this paper, where the structure takes the form of an elongate dielectric flexure body having a mounting end and a free end.