Journal ArticleDOI
Unusual lattice distortion in a Ba0.5Sr0.5TiO3 thin film on a LaAlO3 substrate
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TLDR
In this article, a perovskite Ba 0.5Sr0.5TiO3 thin film, grown on a (001) LaAlO3 substrate by pulsed-laser ablation, reveals that the film of single-crystal quality has an unusually distorted lattice with lattice parameters a and b larger than c (perpendicular to the interface) by 1.4%.Abstract:
Transmission electron microscopy (TEM) of a perovskite Ba0.5Sr0.5TiO3 thin film, grown on a (001) LaAlO3 substrate by pulsed-laser ablation, reveals that the film of single-crystal quality has an unusually distorted lattice with lattice parameters a and b (parallel to the interface) larger than c (perpendicular to the interface) by 1.4%. There is evidence that the as-examined Ba0.5Sr0.5TiO3 film is a variant of its high-temperature cubic phase due to its anisotropic thermal contraction during cooling. A large lattice mismatch value of 5.7% (to be compared to the normal value of 4.13%) is observed from selected area electron diffraction patterns and high-resolution TEM images of cross-sectional specimens, which suggests that the growing high-temperature film under the film growth condition may have a larger lattice constant and a different thermal expansion behavior with respect to the bulk material.read more
Citations
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Journal ArticleDOI
Ferroelectric materials for microwave tunable applications
TL;DR: A review of the properties of ferroelectric materials that are relevant to microwave tunable devices is presented in this article, where the theory of dielectric response of tunable bulk materials and thin films is discussed.
Journal ArticleDOI
Enhanced in-plane ferroelectricity in Ba0.7Sr0.3TiO3 thin films grown on MgO (001) single-crystal substrate
TL;DR: In this article, the in-plane ferroelectric properties of the Ba07Sr03TiO3 thin film were evaluated using X-ray diffraction characterization, which revealed a good crystallinity and tensile inplane stress in the film.
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A FIB-STEM study of strontium segregation and interface formation of directly assembled La0.6Sr0.4Co0.2Fe0.8O3-δ Cathode on Y2O3-ZrO2 electrolyte of solid oxide fuel cells
Shuai He,Shuai He,Martin Saunders,Kongfa Chen,Haifeng Gao,Alexandra Suvorova,William D.A. Rickard,Zakaria Quadir,Chengqiang Cui,San Ping Jiang,San Ping Jiang +10 more
Journal ArticleDOI
Threading dislocation generation in epitaxial (Ba,Sr) TiO3 films grown on (001) LaAlO3 by pulsed laser deposition
TL;DR: In this article, the dislocation structures of the Ba0.6Sr0.4TiO3 films were investigated using transmission electron microscopy, and it was shown that the threading dislocations are not generated as the result of half-loop climb from the deposit surface as proposed previously, but are instead formed when misfit dislocation are forced away from the interface during island coalescence.
Journal ArticleDOI
Interface effects on highly epitaxial ferroelectric thin films
Y. Lin,C. L. Chen +1 more
TL;DR: In this article, the natures of interface induced local strain formations, edge dislocations, and antiphase domain boundaries are reviewed in a thin film ferroelectrics are dominantly affected by the strains induced by lattice misfits between the films and the substrates, surface step terrace, both step height and terrace dimension, and the surface terminations.
References
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Journal ArticleDOI
The Physics of Ferroelectric Memories
TL;DR: In this article, the authors describe a scenario where they are in the last stages of typing their thesis, the year is 1980, and it's a hot, hazy summer afternoon, a thunderstorm brews on the horizon.
Ferroelectric thin films
E.R. Myers,A.I. Kingon +1 more
TL;DR: The first Symposium dedicated to the field of ferroelectric thin films was held by the Materials Research Society at the Spring 1990 Meeting in San Francisco, CA, April 16-20, 1990 as mentioned in this paper.
Journal ArticleDOI
NANO-phase SBT-family ferroelectric memories
TL;DR: In this paper, a review is presented of deposition, switching, and leakage current in these devices, which are small enough to permit 1 Gbit memories on a standard Si chip.
Journal ArticleDOI
Large dielectric constant (ε/ε0>6000) Ba0.4Sr0.6TiO3 thin films for high-performance microwave phase shifters
C. M. Carlson,T. V. Rivkin,P. A. Parilla,John Perkins,D. S. Ginley,A. B. Kozyrev,V. N. Oshadchy,A. S. Pavlov +7 more
TL;DR: In this paper, epitaxial Ba0.4Sr0.6TiO3 (BST) films via laser ablation were deposited on MgO and LaAlO3 substrates for tunable microwave devices.
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