Journal ArticleDOI
Enhancement of ferroelectricity in strained BaTiO3 thin films.
Kyoung Jin Choi,Michael D. Biegalski,Yulan Li,Alok Sharan,Jürgen Schubert,Reinhard Uecker,P. Reiche,Y. B. Chen,Xiaoqing Pan,Venkatraman Gopalan,Long Qing Chen,Darrell G. Schlom,Chang-Beom Eom +12 more
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TLDR
This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.Abstract:
Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO 3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO 3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.read more
Citations
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Journal ArticleDOI
Physics and Applications of Bismuth Ferrite
Gustau Catalan,James F. Scott +1 more
TL;DR: In this paper, the authors summarize both the basic physics and unresolved aspects of BiFeO3 and device applications, which center on spintronics and memory devices that can be addressed both electrically and magnetically.
Journal ArticleDOI
Multiferroics: progress and prospects in thin films.
TL;DR: Novel device paradigms based on magnetoelectric coupling are discussed, the key scientific challenges in the field are outlined, and high-quality thin-film multiferroics are reviewed.
Journal ArticleDOI
Anisotropic metal nanoparticles: Synthesis, assembly, and optical applications
Catherine J. Murphy,Tapan K. Sau,Anand Gole,Christopher J. Orendorff,Jinxin Gao,Linfeng Gou,Simona E. Hunyadi,Tan Li +7 more
TL;DR: Variations in reaction conditions and crystallographic analysis of gold nanorod have led to insight into the growth mechanism of these materials, and optical applications in sensing and imaging, which take advantage of the visible light absorption and scattering properties of the nanorods are discussed.
Journal ArticleDOI
Physics of thin-film ferroelectric oxides
TL;DR: In this article, the authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices.
Journal ArticleDOI
Ferroelectric thin films: Review of materials, properties, and applications
Nava Setter,Dragan Damjanovic,L. Eng,Glen R. Fox,Spartak Gevorgian,Seungbum Hong,Angus I. Kingon,Hermann Kohlstedt,N. Y. Park,G. B. Stephenson,I. Stolitchnov,A. K. Taganstev,D. V. Taylor,Tomoaki Yamada,Stephen K. Streiffer +14 more
TL;DR: An overview of the state of the art in ferroelectric thin films is presented in this paper, where the authors review applications: micro-systems' applications, applications in high frequency electronics, and memories based on Ferroelectric materials.
References
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Journal ArticleDOI
Epitaxial BiFeO3 multiferroic thin film heterostructures.
Jian Wang,Jeffrey B. Neaton,Haimei Zheng,Valanoor Nagarajan,Satishchandra Ogale,B. T. Liu,Dwight Viehland,V. Vaithyanathan,Darrell G. Schlom,Umesh V. Waghmare,Nicola A. Spaldin,Karin M. Rabe,Manfred Wuttig,Ramamoorthy Ramesh +13 more
TL;DR: Enhanced polarization and related properties in heteroepitaxially constrained thin films of the ferroelectromagnet, BiFeO3, and combined functional responses in thin film form present an opportunity to create and implement thin film devices that actively couple the magnetic and ferroelectric order parameters.
Journal ArticleDOI
Defects in epitaxial multilayers: I. Misfit dislocations*
J.W. Matthews,A.E. Blakeslee +1 more
TL;DR: In this paper, it was shown that the interfaces between layers were made up of large coherent areas separated by long straight misfit dislocations and the Burgers vectors were inclined at 45° to (001) and were of type 1/2a.
Journal ArticleDOI
Mechanical properties of thin films
TL;DR: In this paper, it is shown that very large stresses may be present in the thin films that comprise integrated circuits and magnetic disks and that these stresses can cause deformation and fracture to occur.
Journal ArticleDOI
Room-temperature ferroelectricity in strained SrTiO3.
J. H. Haeni,Patrick Irvin,Wontae Chang,Reinhard Uecker,P. Reiche,Y. L. Li,Somnath Choudhury,Wei Tian,Marilyn E. Hawley,B. Craigo,Alexander K. Tagantsev,Xiaoqing Pan,Stephen K. Streiffer,Long Qing Chen,Steven W. Kirchoefer,Jeremy Levy,Darrell G. Schlom +16 more
TL;DR: It is shown that epitaxial strain from a newly developed substrate can be harnessed to increase Tc by hundreds of degrees and produce room-temperature ferro electricity in strontium titanate, a material that is not normally ferroelectric at any temperature.
Journal ArticleDOI
Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectric Thin Films
TL;DR: In this paper, a phenomenological thermodynamic theory of ferroelectric thin films epitaxially grow on cubic substrates is developed using a new form of the thermodynamic potential, which corresponds to the ac tual mechanical boundary conditions of the problem.