Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1-xGex, In1-xGaxAs and In1-xGaxAsyP1-y in calculating minimum capacitance in C-V plot of MIS structure

TLDR: In this article, an expression for the composition and temperature dependence of intrinsic carrier densities in Si 1− x Ge x, In 1−x Ga x As and In 1 − x Ga X As y P 1− y are developed.

Abstract: Empirical expressions for the composition and temperature dependence of intrinsic carrier densities in Si 1− x Ge x , In 1−x Ga x As and In 1− x Ga x As y P 1− y are developed. The value is then used to compute the minimum capacitance in AlSi 3 N 4 Si 1− x Ge x MIS structures and good agreement is obtained with the experimental data. The expected values of minium capacitance for MIS diodes made of the other two materials are given.