Journal ArticleDOI
Very shallow p+‐n junction formation by low‐energy BF+2 ion implantation into crystalline and germanium preamorphized silicon
TLDR
In this paper, very low energy BF+2 ion implantation has been used to form very shallow (≤1000 A) junctions in crystalline and Ge+ preamorphized Si.Abstract:
Very low energy (6 keV) BF+2 ion implantation has been used to form very shallow (≤1000 A) junctions in crystalline and Ge+ preamorphized Si. Low‐temperature furnace annealing was used to regrow the crystal, and rapid thermal annealing was used for dopant activation and radiation damage removal. In preamorphized samples, Ge+ implantation parameters were found to have an influence on B diffusion. Our results show that for temperatures higher than 950 °C, B diffusion, rather than B channeling, becomes the dominant mechanism in determining the junction depth. Computer simulations of the profiles show regions of retarded and enhanced B diffusion, which depend on surface and end‐of‐range damage, respectively.read more
Citations
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Journal ArticleDOI
Ultra shallow doping profiling with SIMS
TL;DR: An overview of the possibilities and limitations of secondary ion mass spectrometry as an analytical tool in the investigation of near-perfect, i.e., almost atomically sharp, dopant and impurity distributions is given in this paper.
Journal ArticleDOI
Material and electrical properties of ultra-shallow p/sup +/-n junctions formed by low-energy ion implantation and rapid thermal annealing
TL;DR: In this paper, a study of low-energy ion implantation processes for the fabrication of ultrashallow p/sup +/-n junctions is presented, and the resulting junctions are examined in terms of defect annihilation, junction depth, sheet resistance, and diode reverse leakage current.
Journal ArticleDOI
Influence of fluorine preamorphization on the diffusion and activation of low‐energy implanted boron during rapid thermal annealing
TL;DR: In this article, the diffusion and activation of low-energy implanted B in F preamorphized Si during rapid thermal annealing has been studied, where secondary ion mass spectroscopy and cross-sectional transmission electron micrograph results show F accumulation near the surface and at end-of-range defects.
Journal ArticleDOI
Si ultrashallow p+n junctions using low‐energy boron implantation
TL;DR: In this paper, boron-doped junctions in silicon have been investigated using secondary-ion mass spectroscopy and four-point probe technique, and the results show that sub 20 nm p+n junctions are obtained without the need for further processes such as preamorphization and high-temperature annealing.
Journal ArticleDOI
Formation of ultrashallow p+‐n junctions by low‐energy boron implantation using a modified ion implanter
TL;DR: In this paper, the Varian Extrion Series 400 implanter was modified for the purpose of implanting at ultralow energies (0.5-5 keV).
References
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Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous Si
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Journal ArticleDOI
Elimination of end‐of‐range and mask edge lateral damage in Ge+ preamorphized, B+ implanted Si
A. C. Ajmera,G. A. Rozgonyi +1 more
TL;DR: In this article, a defect-free structure was obtained following a 10 s rapid thermal anneal (RTA) in a nonoxidizing Ar ambient for shallow boron junctions preamorphized via germanium ion implantation.
Journal ArticleDOI
Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials
TL;DR: In this article, the influence of lattice defects induced by silicon implantation on the B, P, As, and Sb diffusivities was investigated after annealing between 700 and 900 degrees C. The authors determined the depth position of the residual implantation defects in undoped samples by the analysis of the rocking curves obtained by triple crystal x-ray diffraction and transmission electron microscopy.
Journal ArticleDOI
Low energy range distributions of 10B and 11B in amorphous and crystalline silicon
W. Wach,K. Wittmaack +1 more
TL;DR: In this paper, low energy SIMS has been used to determine range distributions of boron in amorphous and crystalline silicon in the energy regions 1-40 keV and 5-10 keV, respectively.
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Elimination of end‐of‐range and mask edge lateral damage in Ge+ preamorphized, B+ implanted Si
A. C. Ajmera,G. A. Rozgonyi +1 more