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Open AccessJournal ArticleDOI

What lurks below the last plateau: experimental studies of the 0.7 × 2e(2)/h conductance anomaly in one-dimensional systems.

Adam P. Micolich
- 14 Oct 2011 - 
- Vol. 23, Iss: 44, pp 443201-443201
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TLDR
In this article, a review report on experimental studies of fractionally quantized plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e (2) 2 /h.
Abstract
The integer quantised conductance of one-dimensional electron systems is a well-understood effect of quantum confinement. A number of fractionally quantised plateaus are also commonly observed. They are attributed to many-body effects, but their precise origin is still a matter of debate, having attracted considerable interest over the past 15 years. This review reports on experimental studies of fractionally quantised plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e(2)/h.

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Citations
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Quantized Thermal Conductance of Dielectric Quantum Wires

TL;DR: In this paper, the authors used the Landauer formulation of transport theory to predict that dielectric quantum wires should exhibit quantized thermal conductance at low temperatures in a ballistic phonon regime.
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A review of progress in the physics of open quantum systems: theory and experiment.

TL;DR: A detailed discussion of the behavior of mesoscopic devices (and other OQSs) in terms of the projection-operator formalism, and discusses experiments on mesoscopic quantum point contacts that provide evidence of the environmentally-mediated coupling of quantum states.
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A review of progress in the physics of open quantum systems: theory and experiment

TL;DR: In this paper, the authors provide a detailed discussion of the behavior of OQSs in terms of the projection operator formalism, according to which the system under study is considered to be comprised of a localized region, embedded into a well-defined environment of scattering wavefunctions (with $Q+P=1$).

Density dependent spin polarisation in ultra low-disorder quantum wires

TL;DR: In this paper, the authors present conductance measurements on ultra-low-disorder quantum wires supportive of a spin polarization at B = 0.5-0.7)x2e(2)/h in conductance data.
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All-Electric Quantum Point Contact Spin Polarizer

TL;DR: Experimental evidence is presented that a quantum point contact -- a short wire -- made from a semiconductor with high intrinsic spin-orbit coupling can generate a completely spin-polarized current when its lateral confinement is made highly asymmetric.
References
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Journal ArticleDOI

Ballistic hole transport in a quantum wire

TL;DR: In this paper, the authors reported ballistic hole conduction in 2μm long GaAs quantum wires of nominal cross-section 15 nm by 15 nm, and observed several quantized conduction steps of approximate height 0.77e2∕h.
Journal ArticleDOI

Non-Kondo zero-bias anomaly in quantum wires

TL;DR: In this paper, the authors proposed a phenomenological model to reproduce the ZBA which is in agreement mostly with observed characteristics, and showed that the observed ZBA does not appear to have a Kondo origin.
Journal ArticleDOI

Localization of electrons and formation of two-dimensional Wigner spin lattices in a special cylindrical semiconductor stripe

TL;DR: In this article, the authors consider a 2D electron gas residing on the surface of a cylinder of a given radius R in the presence of a parabolic confinement along the axis of the cylinder.
Journal ArticleDOI

Nature of electron states and symmetry breaking in quantum point contacts according to the local spin density approximation

TL;DR: In this paper, the local spin density approximation (LSDA) was used to recover ferromagnetic spatially split solutions in the pinch-off regime as well as antisymmetric solutions that occur with decreasing gate voltage.
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