What lurks below the last plateau: experimental studies of the 0.7 × 2e(2)/h conductance anomaly in one-dimensional systems.
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In this article, a review report on experimental studies of fractionally quantized plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e (2) 2 /h.Abstract:
The integer quantised conductance of one-dimensional electron systems is a well-understood effect of quantum confinement. A number of fractionally quantised plateaus are also commonly observed. They are attributed to many-body effects, but their precise origin is still a matter of debate, having attracted considerable interest over the past 15 years. This review reports on experimental studies of fractionally quantised plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e(2)/h.read more
Citations
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Temperature modulation of the transmission barrier in quantum point contacts
TL;DR: In this paper, the authors investigated near-equilibrium ballistic transport through a quantum point contact (QPC) along a GaAs/AlGaAs heterojunction with a transfer matrix technique as a function of temperature and the shape of the potential barrier in the QPC.
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Spin-resolved conductance quantization in InAs
Hauke Lehmann,T Benter,I von Ahnen,Jan Jacob,Toru Matsuyama,Ulrich Merkt,Ulrich Kunze,Andreas D. Wieck,Dirk Reuter,Dirk Reuter,Ch. Heyn,Wiebke Hansen +11 more
TL;DR: In this paper, the authors report on the quantized conductance through side and top-gated InAs quantum point contacts and discuss its dependence on the temperature and on a magnetic field applied perpendicular to the sample plane.
The 0.7 anomaly in quantum point contacts
TL;DR: In this article, the authors present a microscopic model that sheds light on the microscopic origin of a phenomenon in the field of semiconductor nanostructures, which occurs in transport through a short and narrow quasi-one-dimensional constriction, the quantum point contact (QPC).
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Hysteresis in the conductance of asymmetrically biased GaAs quantum point contacts with in-plane side gates
TL;DR: In this article, the authors observed hysteresis between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of an asymmetrically biased GaAs quantum point contact (QPC).
References
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