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Open AccessJournal ArticleDOI

What lurks below the last plateau: experimental studies of the 0.7 × 2e(2)/h conductance anomaly in one-dimensional systems.

Adam P. Micolich
- 14 Oct 2011 - 
- Vol. 23, Iss: 44, pp 443201-443201
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TLDR
In this article, a review report on experimental studies of fractionally quantized plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e (2) 2 /h.
Abstract
The integer quantised conductance of one-dimensional electron systems is a well-understood effect of quantum confinement. A number of fractionally quantised plateaus are also commonly observed. They are attributed to many-body effects, but their precise origin is still a matter of debate, having attracted considerable interest over the past 15 years. This review reports on experimental studies of fractionally quantised plateaus in semiconductor quantum point contacts and quantum wires, focusing on the 0.7 × 2e(2)/h conductance anomaly, its analogues at higher conductances and the zero-bias peak observed in the dc source-drain bias for conductances less than 2e(2)/h.

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Citations
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Journal ArticleDOI

Temperature modulation of the transmission barrier in quantum point contacts

TL;DR: In this paper, the authors investigated near-equilibrium ballistic transport through a quantum point contact (QPC) along a GaAs/AlGaAs heterojunction with a transfer matrix technique as a function of temperature and the shape of the potential barrier in the QPC.
Journal ArticleDOI

Spin-resolved conductance quantization in InAs

TL;DR: In this paper, the authors report on the quantized conductance through side and top-gated InAs quantum point contacts and discuss its dependence on the temperature and on a magnetic field applied perpendicular to the sample plane.

The 0.7 anomaly in quantum point contacts

Jan Heyder
TL;DR: In this article, the authors present a microscopic model that sheds light on the microscopic origin of a phenomenon in the field of semiconductor nanostructures, which occurs in transport through a short and narrow quasi-one-dimensional constriction, the quantum point contact (QPC).
Journal ArticleDOI

Hysteresis in the conductance of asymmetrically biased GaAs quantum point contacts with in-plane side gates

TL;DR: In this article, the authors observed hysteresis between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of an asymmetrically biased GaAs quantum point contact (QPC).
References
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TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
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Significance of Electromagnetic Potentials in the Quantum Theory

TL;DR: In this article, it was shown that there exist effects of potentials on charged particles, even in the region where all the fields (and therefore the forces on the particles) vanish.
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Localized Magnetic States in Metals

TL;DR: In this article, the conditions necessary in metals for the presence or absence of localized moments on solute ions containing inner shell electrons are analyzed, and a self-consistent Hartree-Fock treatment is applied to show that there is a sharp transition between the magnetic state and the nonmagnetic state, depending on the density of states of free electrons, the $s\ensuremath{-}d$ admixture matrix elements, and the Coulomb correlation integral in the $d$ shell.
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