Journal ArticleDOI
Widely tunable narrow-linewidth 1.5 μm light source based on a monolithically integrated quantum dot laser array
Annette Becker,Vitalii Sichkovskyi,Marko Bjelica,Anna Rippien,Florian Schnabel,M. Kaiser,Ori Eyal,Bernd Witzigmann,Gadi Eisenstein,Johann Peter Reithmaier +9 more
TLDR
In this article, a monolithically integrated widely tunable narrow-linewidth light source was realized on an InP-based quantum dot (QD) gain material, which enabled standalone distributed feedback (DFB) lasers with intrinsic linewidths as low as 110 kHz.Abstract:
A monolithically integrated widely tunable narrow-linewidth light source was realized on an InP-based quantum dot (QD) gain material. The quasi zero-dimensional nature of QDs and the resulting low linewidth enhancement factor enabled standalone distributed feedback (DFB) lasers with intrinsic linewidths as low as 110 kHz. An integrated device comprising four DFB lasers with on-chip micro-heaters, a 3 dB-coupler network, and a semiconductor optical amplifier (SOA), which covers the entire C+ telecom band, exhibits a linewidth of below 200 kHz independent of the SOA operation current.read more
Citations
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Journal ArticleDOI
Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers
Jianan Duan,Heming Huang,Z. G. Lu,Philip J. Poole,Cheng Wang,Frédéric Grillot,Frédéric Grillot +6 more
TL;DR: In this article, the spectral linewidth of InAs/InP quantum dot distributed feedback laser was investigated and the authors reported a narrow spectral linearity of 160 kHz with a low sensitivity to temperature.
Journal ArticleDOI
Large linewidth reduction in semiconductor lasers based on atom-like gain material
Tali Septon,Annette Becker,Sutapa Gosh,Gal Shtendel,Vitalii Sichkovskyi,Florian Schnabel,Anna Sengül,Marko Bjelica,Bernd Witzigmann,Johann Peter Reithmaier,Gadi Eisenstein +10 more
TL;DR: In this article, the spectral and power characteristics of a single-mode InAs/AlGaInAs/InP QD distributed feedback laser operating at 1.5μm were described.
Journal ArticleDOI
Linewidth Enhancement Factor in InAs/GaAs Quantum Dot Lasers and Its Implication in Isolator-Free and Narrow Linewidth Applications
TL;DR: In this article, both theoretically and experimentally, the key parameters that affect the linewidth enhancement factor of InAs/GaAs quantum dot lasers are investigated, and both dot uniformity and doping density are found to be critical in achieving small
Journal ArticleDOI
Dynamic and nonlinear properties of epitaxial quantum dot lasers on silicon for isolator-free integration
Jianan Duan,Heming Huang,Bozhang Dong,Justin Norman,Zeyu Zhang,John E. Bowers,Frédéric Grillot +6 more
TL;DR: In this paper, the authors investigated the dynamic and nonlinear properties of quantum dot (QD) laser directly grown on silicon with a view to isolator-free applications and found that the αH at threshold is as low as 0.32 and the nonlinear gain is investigated from the gain compression factor viewpoint.
Journal ArticleDOI
Carrier-Noise-Enhanced Relative Intensity Noise of Quantum Dot Lasers
TL;DR: In this article, the authors investigated the relative intensity noise of quantum dot laser through a rate equation model taking into account both the spontaneous emission and carrier contributions, and showed that the carrier noise originating from the ground and excited states significantly enhances the intensity of the laser while that from the carrier reservoir does not.
References
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TL;DR: In this article, a theory of the spectral width of a single-mode semiconductor laser is presented and used to explain the recent measurements of Fleming and Mooradian on AlGaAs lasers.
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Novel method for high resolution measurement of laser output spectrum
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Quantum well lasers--Gain, spectra, dynamics
Yasuhiko Arakawa,Amnon Yariv +1 more
TL;DR: In this article, the authors discuss a number of theoretical and experimental issues in quantum well lasers with emphasis on the basic behavior of the gain, the field spectrum, and the modulation dynamics and reveal that the use of quantum well structures results in improvement of these properties and brings several new concepts to optical semiconductor devices.
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The linewidth enhancement factor α of quantum dot semiconductor lasers
TL;DR: It is shown that the various techniques commonly used to measure the linewidth enhancement factor can lead to different values when applied to quantum dot semiconductor lasers, a direct consequence of the intrinsic capture/escape dynamics of quantum dot materials and of the free carrier plasma effects.
Journal ArticleDOI
High-coherence semiconductor lasers based on integral high-Q resonators in hybrid Si/III-V platforms
TL;DR: This work examines the phase noise of SCLs due to the spontaneous recombination of excited carriers radiating into the lasing mode as mandated by quantum mechanics and proposes a new design paradigm for the SCL, which removes most of the modal energy from the optically lossy III-V active region.