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The defects generated in the base region of the transistor by displacement damage appear to be responsible for transistor gain degradation.
We also can easily change the physics included in our model and the geometry of the transistor.
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Sergei Skorobogatov, Ross Anderson 
13 Aug 2002
828 Citations
Circuits can be designed so that single-transistor failures do not lead to security failure.
In addition, it is shown that the floating gate transistor can be modeled as a weakly conductive stuck-on transistor or as a stuck-open transistor depending on the values of the parameters characterizing the defect.
This system can deal with bridging, transistor stuck-open, transistor stuck-on and stuck-at faults.
In this paper, we propose a structure that improves the OFF state and switching behavior of the transistor without increase in the transistor length.
The amorphous transistor materials can support such large strains because they lack a mechanism for dislocation motion.