Could heavy n-type doping ion implantation made in GeSn?
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Heavy n-type doping ion implantation has been demonstrated in GeSn alloys with Sn concentrations up to 4.5% using ion implantation followed by millisecond-range explosive solid phase epitaxy . The fabrication of tensile strained epi-Ge layers co-implanted with phosphorus doses has also been reported . However, it has been shown that heavy n-type doping of Ge is highly metastable and electrically deactivates at low temperatures . On the other hand, chalcogenide glasses, including GeTe, have been successfully n-type doped by ion implantation of Bi, demonstrating rectification and photocurrent in a Bi-implanted device . It has been found that Te implantation in Ge leads to the formation of amorphous surface GeO clusters and deep extended defects, making regular implantation ineffective for high-level n-type doping . Therefore, while heavy n-type doping has been achieved in GeSn and chalcogenide glasses, it remains challenging in Ge due to its metastability and the formation of defects.
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| Papers (5) | Insight |
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3 Citations | The given text does not provide any information about heavy n-type doping ion implantation in GeSn. |
| The paper does not mention GeSn specifically, but it does mention n-type doping of chalcogenide glasses by ion implantation. | |
26 Citations | The paper does not mention GeSn or heavy n-type doping ion implantation in GeSn. |
Open access 01 Dec 2015 4 Citations | The text does not mention GeSn or heavy n-type doping ion implantation in GeSn. |
10 Citations | Yes, heavy n-type doping ion implantation can be made in GeSn alloys using co-implantation of Sn and P into Ge. |
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