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It is possible to use this quick test for lot acceptance and to design a proper voltage screening for the particular batch under test.
This result suggests a new procedure for the voltage endurance test.
We have developed the test circuit for understanding the statistical and local variation of MOSFET in very short time.
Proceedings ArticleDOI
Neeraj Khera, Sharad Tiwari 
01 Jul 2016
3 Citations
The test will help in selecting the switching power MOSFET for the power electronic converters.
Proceedings ArticleDOI
01 May 2017
72 Citations
In addition power losses during power cycling test should be generated in forward MOSFET-mode at high positive gate-voltage.
This minimizes dependencies on layout, spatial and statistical variations, as well as other ambiguities that can exist when a variety of test structures is used to evaluate different MOSFET and circuit performance parameters.
In this study, for the first time, we investigated impacts of the static and dynamic local bending on MOSFET characteristics using a novel test structure.
Experimental results reveal the electrical responses from the test setup are consistent with the MOSFET behavior and an alternative method for the microfluidic FET characterization.
These experimental results strongly suggest velocity overshoot in a 75-nm-channel MOSFET.
In addition, the proposed gate driver has a good stability, since no voltage fluctuation occurs under 720-h test.

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