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In this paper, we report the first demonstration of high voltage NPN bipolar junction transistors in 4H-SiC.
The results may have implications to field-effect transistors made from other chemically derived materials.
We believe these are the fastest transistors of their kind in the world.
It is demonstrated that thin-film transistors can be made reproducibly with desirable characteristics.
We propose new side-gate transistors.
Journal ArticleDOI
12 Citations
These are to the authors' knowledge the smallest polymer transistors reported.
The progress made so far in this area, developing not only discrete heterojunction bipolar transistors but also integrated circuits, is impressive.