Showing papers on "Evaporation (deposition) published in 1984"

Review of glycol ether and glycol ether ester solvents used in the coating industry.

Abstract: Ethylene oxide-based glycol ether and glycol ether ester solvents have been used in the coatings industry for the past fifty years. Because of their excellent performance properties (evaporation ra...

Argon‐ion assisted etching of silicon by molecular chlorine

Abstract: Argon‐ion assisted etching of silicon by molecular chlorine has been investigated. The masses and some kinetic energy distributions of the neutral particles emitted from the surface have been determined by mass spectrometry and time‐of‐flight spectra. It is found that an important part of the silicon‐containing particles consists of SiCl and SiCl2 molecules which have kinetic energies in the eV region. The observations exclude a simple evaporation of SiCl4 at the target temperature. A tentative model—consisting of a collision cascade like process parallel to thermal evaporation at the substrate temperature induced by a reduction of the effective surface binding energy during a sputtering event—is given to explain the observed kinetic energy distributions qualitatively.

Manufacture of semiconductor device

Abstract: PURPOSE:To simplify the manufacturing process of a semiconductor device and to contrive reducing the time for the manufacture by carrying out an alumi num evaporation process and an aluminum sintering process simultaneously in one process at a specific temperature for the evaporation of aluminum on a semiconductor substrate CONSTITUTION:A semiconductor substrate which was sufficiently washed in a previous process is set at a definite position in an evaporation equipment Then, the inside of the evaporation equipment is made a vacuum and the semi conductor substrate is heated by a heating source to above 250 degC, eg, 250-300 degC The aluminum source provided in the evaporation equipment is evaporated by heating and adheres to the surface of the semiconductor substrate For example, only approx 15-20 minute processing is required for forming an evaporation layer 05 mum thick Then, even in the case of evaporating the other metal on the aluminum evaporated layer formed in the above-mentioned process, the semiconductor substrate which is being heated is processed Further, the sintering of aluminum is still being continued even during this period and no higher temperature is required for the temperature itself of heating

Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition

Abstract: An improved method of and apparatus for depositing thin films, such as indium tin oxide, onto substrates, which deposition comprises one step in the fabrication of electronic, semiconductor and photovoltaic devices. The method includes the novel steps of combining the use of (1) an electron beam to vaporize a source of solid material, and (2) electromagnetic energy to provide an ionizable plasma from reactant gases. By passing the vaporized solid material through the plasma, it is activated prior to the deposition thereof onto the substrate. In this manner, the solid material and the reactant gases are excited to facilitate their interaction prior to the deposition of the newly formed compound onto the substrate.

Manufacture of photovoltaic element

Abstract: PURPOSE:To enable a thin-film photovoltaic element having a desired voltage to be readily formed, by effecting series connection and separation between elements by diagonal evaporation and a dicing method. CONSTITUTION:A glass substrate 1 is cut with a blade 2 to form a plurality of grooves 3. The substrate 1 is disposed so as to diagonally face an evaporation source as indicated by the arrow 6, to form an electrically conductive transparent film 4. An a-Si film 7 is formed on the substrate 1 by plasma CVD. The a-Si film 7 and the electrically conductive transparent film 4 in each of the grooves 3 are cut, together with the glass substrate 1, by using a blade 8, thereby forming a center groove 9. With the substrate 1 orientated so as to diagonally face an evaporation source as indicated by the arrow 11, metal electrodes 10 are deposited by evaporation. This diagonal direction is opposite to the first orientation direction. As a result, the metal electrode 10 and a transparent film 4 which is adjacent thereto are connected together at a slant surface 12 of each center groove 9, whereby a series connection is formed. To isolate the adjacent elements from each other, the laminated layers, together with the glass substrate 1, are cut perpendicularly to the grooves 3 using a blade 14.

Formation of artificial superlattice composed of ultrathin layers of CoO and NiO by reactive evaporation

Abstract: Films composed of alternating ultrathin layers of CoO and NiO have been prepared by reactive evaporation. The structure was investigated by x‐ray diffraction and transmission electron microscopy (TEM). The CoO‐NiO multilayered films deposited on the (100) plane of NaCl at 250 °C were single crystal, having the NaCl structure with lattice constants intermediate between the ones of CoO and NiO when each layer was ultrathin (<5 nm). The stacking sequence could be directly observed by the cross‐sectional TEM method. The artificial periodicity in the films was also confirmed by the low angle Bragg diffraction and the satellite peaks appearing around the (200) peak. It was found that the films had an artificial superlattice consisting of coherently stacked CoO and NiO single‐crystal layers. This structure resulted from alternate epitaxial deposition of these oxides. An artificial superlattice formed also on glass substrates although they were polycrystal films.

High vacuum evaporation of ferromagnetic materials -- A new production technology for magnetic tapes

Abstract: The vacuum deposition of ferromagnetic material at oblique incidence will become a major production technology for magnetic tapes for longitudinal recording applications in the future. In this paper the general formation mechanism of magnetic thin films, the field of relevant parameters and the dependance of magnetic properties on the essential parameters is discussed and demonstrated by a few examples of hysteresis loops: The resulting layout of laboratory and pilot production equipment developed so far for this application is demonstrated. For typical application examples, the material efficiency of the systems has been calculated as a function of the used incidence angle range. Also the differential increase in layer thickness as a function of incidence angle has been calculated in order to get a simple model for the formation of microcolumns.

Solar controlled glazing and method of producing glazing

Abstract: Solar-controlled glazing having a transmission of between 5 and 40% in the visible spectrum range and having heat-reflection properties is produced by applying an oxide layer having an optical thickness of between 20 and 280 nm directly to a transparent substrate by cathodic evaporation in an oxygen-containing atmosphere to form a first layer. A chromium nitride layer having a geometric thickness of between 10 and 40 nm is then applied in an atmosphere consisting of inert gas and nitrogen to provide a second layer. An optical third dielectric layer may be applied to the second layer. The oxide layer is selected from oxides of tin, titanium and aluminium.

Obliquely evaporated iron-cobalt and iron-cobalt-chromium thin film recording media

Abstract: Thin films of Fe-Co and Fe-Co-Cr were deposited onto a variety of substrates by e-beam evaporation at an oblique angle of incidence of 60 degrees to the substrate normal. Deposition at this angle results in the formation of an easy axis in the plane of the magnetic films, oriented perpendicular to the plane of vapor incidence. Electron microscopy reveals the anisotropy to be due to the formation of parallel crystallite chains, which are, on the average, aligned transverse to the plane of the vapor beam. The lateral dimensions and the extent of alignment of these chains depend mainly on the substrate microtopography, so that with increasing surface roughness the alignment decreases, thereby leading to a decrease of the squareness value S and the in-plane anisotropy Mr(easy)/Mr(hard). The film coercivity, too, is to some degree determined by such aligned crystallite chains. However, Hc in general increases with increasing substrate microtopography and with decreasing film thickness.

Manufacture of gallium nitride semiconductor device

Abstract: PURPOSE:To enable the formation of electrodes to the lower GaN layer by forming an apertuer in the surface GaN layer by a method wherein two or more of GaN layers are formed on a substrate, and a protection film is formed on the surface; next, an aperture is formed in the protection film, and heat treatment is carried out in a gas atmosphere containing hydrogen chloride gas. CONSTITUTION:An N type GaN layer 2 and a P type GaN layer 3 of insulation or high resistivity are formed on a sapphire substrate 1, and an Si dioxide film 10 is deposited on the GaN layer 3 of the outermost surface. Using this Si dioxide film 10 as the protection mask member, after an aperture is selectively provided thereto, heat treatment is carried out at 500 deg.C with flows of the mixed gas of AR and HCl, when the GaN layer 3 of the outermost surface exposed to this aperture is removed; accordingly, the lower GaN layer 2 is exposed. Next, the Si dioxide film 10 the protection film is removed; thereafter, an Al film is formed by evaporation and patterned into the first electrode layer 4 and the second electrode layer 11.

Vacuum evaporated CdSe /SUB 1-x/ Te /SUB x/ thin films for electrochemical photovoltaic cells

Abstract: CdSe /SUB 1-x/ Te /SUB x/ thin films have been produced over a wide range of x values by concurrent vacuum evaporation of the constituent elements The most consistent results in terms of producing single-phase material were obtained when substrate temperatures were in the range of 350/sup 0/-450/sup 0/C Photoelectrochemical evaluation of the resultant thin films indicated postdeposition heat-treatment and surface etching were necessary to maximize photovoltaic outputs A dependence of photoelectrochemical behavior, bandgap, and efficiency on x value was also found The maximum efficiency recorded was 74% for a CdSe /SUB 08/ Te /SUB 02/ composition under simulated AM2 conditions

Effects of metal—support interaction and temperature on the sintering of Pt and Ag particles supported on inorganic solids

Abstract: In situ transmission electron microscopy was used to examine the sintering of Pt and Ag on amorphous C, SiO 2 , and A1 2 O 3 in vacuum. Liquid-like motions were observed for Pt particles on these supports at temperatures of 600–750°C. The Pt particles grew through abrupt surface movement and subsequent coalescence of adjacent pairs. On the other hand, Ag particles on all the supports were stable below 450°C, while at higher temperatures they gradually disappeared from C and A1 2 O 3 surfaces due to evaporation but they sintered on SiO 2 . The sintering mechanism of Ag/SiO 2 was noted to depend on temperature; atomic migration predominates over Brownian particle migration at higher temperature. This temperature dependence is in accord with that in Ni/C, Ni/SiO 2 , and Ni/A1 2 O 3 reported previously. The order of the strength of metal—support interaction was estimated to be Pt/A1 2 O 3 > Pt/SiO 2 > Pt/C from the temperature dependence of mean particle diameter and the particle morphology, and Ag/SiO 2 > Ag/Al 2 O 3 > Ag/C from the relative difficulty of evaporation and the particle shape. The particle migration mechanism is considered to involve liquid-like intermittent movement rather than Brownian type movement when the metal—support interaction is significantly weak.

Vacuum‐deposited thin‐metal‐film disk

Abstract: The fabrication process used in an all‐vacuum‐deposition thin‐metal‐film disk will be described. The process consists of planar dc‐magnetron sputter deposition of a stainless alloy undercoat onto a 14‐in.‐diameter AlMg‐4 disk substrate, e‐beam evaporation of an Fe–Co–Cr alloy magnetic layer at an oblique angle of incidence, planar dc‐magnetron sputter deposition of a rhodium overcoat and spray deposition of a liquid lubricant layer. Some mechanical and magnetic performance characteristics of disks, deposited in that fashion, are described.

Pulsed laser evaporation of Cd3As2

Abstract: A pulsed Nd:yttrium aluminum garnet (YAG) laser, power density 4–10×107 W/cm2, was used to prepare thin films of Cd3As2 by evaporation onto room‐temperature substrates. The net deposition rate was 105 A/s. The film microstructure was composed of amorphous agglomerates, 600–2000 A in size. The films obtained with power density 7–10×107 W/cm2 were stoichiometric and they had electron concentrations of 2.6–10×1018 cm−3 and electron mobilities of 210–520 cm2/Vs at 300 K.

Electrical properties of polycrystalline In-doped CdS thin films

Abstract: Polycrystalline In-doped CdS thin films have been deposited at 160, 220 and 250 degrees C by simultaneous evaporation of CdS and In from two crucibles. Films with In concentrations, NIn, in the 1017-1021 cm-3 range have been characterised by Hall measurements. The conductivity, mobility and carrier concentration dependences on In concentration are reported. For the lower In concentrations, the conductivity is essentially determined by the deposition temperature. At NIn=8*1018 cm-3 the conductivity presents a minimum, which is caused by a minimum in the mobility. The simultaneous rise of the carrier concentration is not sufficient to compensate the decrease of the mobility, contrary to the behaviour of polycrystalline silicon, where no conductivity minimum appears.

Pulsed laser irradiation of GaAs under oxygen and silane atmosphere: Incorporation, losses, influence of native oxide

Abstract: Gallium arsenide single crystals and thin GaAs amorphous deposits (in the 100‐nm range) on Si have been irradiated by pulsed (15 ns) ruby laser under various pressures of 16O2. All the samples were anodically preoxidized in order to obtain a 10‐nm‐thick 18O enriched oxide, the aim being to study the influence of native oxide on oxygen incorporation during irradiation. Nuclear microanalysis and channeling experiments provide information on (i) 16O incorporation, (ii) 18O losses and concentration profile, (iii) Ga and As atoms out of crystallographic sites for single crystal irradiations, and (iv) Ga and As losses for thin films irradations. Our results demonstrate that a surface oxide is formed with a composition near the Ga2O3‐As2O3 stoichiometry via oxygen penetration in the melted layer once the native oxide has been evaporated at irradiation energies above 1 J/cm2. Before complete evaporation,this latter oxide diffuses in GaAs and is responsible for defect creation at irradiation energies as low as 0.4...

Gold metallization process

Abstract: A one step metallization is disclosed for applying a layer of gold or gold alloy to the back of a silicon substrate to facilitate bonding that substrate to a metallized package member. The gold is applied to the substrate, for example by evaporation, while the substrate is maintained at a temperature between about 200° C. and about 360° C. Following the deposition the substrate is quickly cooled to room temperature. The thickness of the gold layer and the deposition temperature are adjusted to insure that the silicon diffusion profile is contained within the gold film during deposition. This insures good adhesion of the gold to the silicon substrate and provides a pure gold surface layer necessary for optimum bonding of the semiconductor substrate to a metallized package portion.

A New Perpendicular Magnetic Film of Co-O by Evaporation

Abstract: A new perpendicular magnetic film has been developed by an evaporation method using room temperature substrates. The film is obtained by partially oxidating the Co film with the oxygen gas introduced during deposition. The film structure is a mixture of very fine Co grains and CoO phase. The obtained films have such superior perpendicular magnetic properties as Hc⊥=1100 Oe, Hk=5.5 kOe and 4πMs=6000 G at Co–45 at%O film composition.

Evaporation conditions and magnetic properties of Co-O perpendicular magnetic films

Abstract: The relationship between the deposition conditions and the magnetic properties of a newly developed Co-O perpendicular magnetic film was investigated. The higher the deposition rate, the more easily the perpendicular magnetic film can be obtained and excellent magnetic properties were obtained even at the deposition rate higher than 900 A/sec. It was found that the superior perpendicular magnetic properties can be obtained when the substrate temperature is near to the room temperature and that PET film can be used as substrate materials. The magnetic properties do not affected by the film thickness and an excellent perpendicular magnetic properties were obtained even at a thin film of 0.2μm thick. The magnetic properties of these films were equivalent to those of the Co-Cr film.

Electrochromic display element

Abstract: PURPOSE:To obtain an electrochromic display element with a decreased change in a writing characteristic with time by interposing a solid intermediate layer between a display body and a counter electrode, and interposing a fluorocomplex between the display body and the solid intermediate layer CONSTITUTION:A display body 3 is constituted of a display body of thin film of for example, tungsten oxide For example, a solid electrolyte of lithium nitride is deposited by evaporation as an intermediate layer 4 after vapor deposition of, for example, lithium hexafluoroaluminate as a fluorocomplex 11 on the body 3 and further, for example, tungsten oxide is deposited by evaporation as a counter electrode 5 thereon and then gold is deposited by evaporation as a lead 6 A back substrate 7 consisting of glass is unitited to the transparent substrate 1 by an adhesive agent 8 consisting of an epoxy resin The complex 11 has the effect of preventing the crystallization of the amorphous display body 3 Said body 3 consists of >=1 kind selected from molybdenum oxide and niobium oxide in addition to the above-described tungsten oxide or the transition metal oxide consisting essentially thereof The complex 11 consists of the complex of >=1 kind selected from the group of lithium hexafluoroaluminate, lithium hexafluorosilicate, etc