Showing papers on "Indium tin oxide published in 1987"

Electrical and photovoltaic properties of indium‐tin‐oxide/p‐InSe/Au solar cells

Abstract: Conditions for efficiency improvement and optimization in indium‐tin‐oxide/p‐indium‐selenide solar cells are discussed in this paper. This aim is achieved by using low‐resistivity p‐indium‐selenide and by incorporating a back‐surface‐field contact. This contact is insured by a p‐indium selenide/gold barrier whose rectifying behavior is explained through the complex impurity structure of p‐indium‐selenide. Electrical and photovoltaic properties of the cells are also reported. The efficiency parameters under AM1 simulated conditions have been improved up to 32 mA/cm2 for the short‐circuit current density, 0.58 V for the open‐circuit voltage, and 0.63 for the filling factor. As a result, solar efficiencies larger than 10% in annealed cells and 8% in unannealed ones have been attained. The limitations of these devices are discussed by investigating the dependence of electrical and efficiency parameters in function of photon flux and temperature.

Thin film electroluminescent device

Abstract: A thin film electroluminescent device including a transparent substrate having a smooth, planar exterior surface and a rough, non-planar interior surface. Layers of a first transparent electrode of indium tin oxide or tin oxide, an insulating material, for example, silicon oxynitride, manganese activated zinc sulfide, an insulating material, and a second electrode of aluminum are deposited in order on the rough, non-planar interior surface of the substrate. The rough, non-planar interface between the phosphor and insulating material provides surfaces at different angles to the light generated within the phosphor layer preventing light from being trapped within the phosphor layer.

110 GHz high-efficiency photodiodes fabricated from indium tin oxide/GaAs

Abstract: An indium tin oxide/GaAs photodiode is reported with a –3 dB bandwidth in excess of 110 GHz. This device exhibits an external quantum efficiency of > 25% (~0.2 A/W). The device is mounted enabling direct measurements of bandwidth to be made using external mixers and a high-frequency spectrum analyser.

X‐ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

Abstract: X‐ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5×10−6–4.0×10−5 Torr. Changes in composition as well as in the deconvoluted In 3d5/2, Sn 3d5/2, and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as PO2 is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In–O bonding.

Transparent, conducting indium tin oxide films formed on low or medium temperature substrates by ion-assisted deposition.

Abstract: An ion-assisted evaporation process is described for the formation of ITO films on substrates that cannot be heated beyond 150° C. Refractive indices and absorption coefficients were measured in the visible part of the spectrum for some of the films. The resistivity of the films varied between 0.7 and 8 × 10−3 Ω cm, depending on the process parameters. The properties were uniform over 25-cm diam areas.

Contrast enhancement filter

Abstract: A contrast enhancement filter having antistatic and antireflection properties is disclosed. The article comprises a plastic support sheet carrying on one side thereof a layer of indium tin oxide, and superposed upon said layer, an antireflection layer. A light-polarizing element is affixed to the opposed side thereof. The contrast enhancement filter can be used for the reduction of specular glare from the surface of cathode ray tubes, computer display screens and the like.

Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays

Abstract: A process for the fabrication of thin film field effect transistors in active matrix liquid crystal display devices includes the utilization of a protective, conductive tab disposed on a corner portion of the pixel electrodes. Electrical contact is made to the pixel electrodes not directly, but rather through a via opening in protective, insulative and amorphous silicon layers. The structure is particularly advantageous in that it permits the utilization of a wider range of gate and upper level metallization materials, particularly aluminum, whose etchants are otherwise found deleterious to pixel electrode material such as indium tin oxide. The structure of the present invention is seen to be readily fabricatable in accordance with high yield fabrication procedures.

Preparation and Characterization of Indium‐Tin‐Oxide Deposited by Direct Thermal Evaporation of Metal Indium and Tin

Abstract: Films of the transparent conductor-tin-oxide (ITO) have been deposited successfully by direct thermal evaporation of metallic indium and tin in an oxygen ambient. Various techniques, such as scanning and transmission electron microscopy, x-ray diffraction, electron microprobe analysis, Hall measurements, and optical transmission measurements, were applied to determine the crystal structure and to measure grain size, tin concentration, optical transmittance, electron concentration, and the mobility of the ITO films. It is found that the key point in reducing the resistivity of the ITO film is by controlling the tin to indium weight ratio to an optimum value of 3 to 1. ITO films with resistivity as low as 1.8 x 10/sup -4/ ..cap omega..-cm and an average optical transmittance as high as 90% can be achieved reproducibly. The films are polycrystalline with a bcc structure and a grain size of approximately 500A.

Transparent aqueous tin compound solution and method of producing transparent conductive tin oxide

Abstract: By reacting a tin carboxylate with hydrogen peroxide at a particular ratio in an aqueous medium, this invention provides a transparent aqueous tin compound solution which can finally form, in an industrially advantageous manner, tin oxide having excellent transparency, uniformity, compactness, conductivity, etc.

Non-destructive testing of SOS wafers using surface photovoltage measurements

Abstract: A device for non-destructive surface photovoltage testing of silicon-on-sapphire (SOS) wafers employs the electrically equivalent of an inserted capacitance in series in a measuring circuit. A pair of thin irridescent coated (TIC) glasses, are positioned on each side of an SOS wafer with an electrical lead attached to each of the conductive coating of tin oxide and indium tin oxide of the TIC glasses. The glass surface (the non-conductive side) of each TIC glass is positioned adjacent to the sapphire layer and silicon layer respectively. An incident light illuminates the sapphire layer and subsequently illuminates the silicon-sapphire interface with a predetermined wave length of light wherein the silicon absorbs all of the light within about 100A of the silicon-sapphire interface. Thus, the incident light is transmitted through the conductive layer of the first TIC glass which is in electrical contact with a detection circuit. The second TIC glass conductive layer is in electrical contact with a calibration signal input which completes the measuring circuit. The measuring circuit with the electrical equivalent of a capacitor in series is able to detect the altered signal resulting from surface photovoltage (SPV) charge due to absorbed incident light which is a measure of the sapphire-silicon interface condition to permit a non-destructive SPV testing of SOS wafers, greatly speeding the pre-selection process of SOS wafers.

Electrochemical synthesis of poly(p-phenylene vinylene) films

Abstract: Electroreduction of α,α,α′,α′-tetrabromo-p-xylene at an indium tin oxide (ITO), platinum, copper or nickel electrode in ethereal solution afforded a thick and uniform poly(p-phenylene vinylene) film in the undoped state. Addition of Cr(CO)6 or Mo(CO)6 accelerated the film growth at the ITO electrode.

DC Magnetron Sputtered ITO Films Applied with Indium Tin Oxide Targets

Abstract: Indium tin oxide (ITO) films were deposited by DC magnetron sputtering using ITO targets. Low resistivity of 1.4×10-4 Ω·cm and high transmittance of 85% at 550 nm were obtained under optimum conditions, depending on a SnO2 content (020 wt.%) in the ITO targets, substrate temperature, and oxygen partial pressure. Films with the low resistivity can be obtained in rather wide sputtering conditions in comparison with in using metal targets. Due to a change in the sputtering conditions, especially the substrate temperature, the optimum SnO2 content in the target was changed. When the substrate was at room temperature, the film with a resistivity of 4.0×10-4 Ω ·cm was prepared for the target of 5 wt.%SnO2, and at 400°C a film with 1.4×10-4 Ω·cm was prepared for the target with 10 wt.%SnO2, with good reproducibility. In these cases, decreasing of SnO2 content in the films was found and (400) preferential orientation of indium oxide (In2O3) was observed in the films by X-ray diffraction technique.

On a Solid-State ECD, WO3/Solid Electrolyte/Metal

Abstract: Electrochromic display (ECD) was investigated using WO3 as the electrochromic material and metals as the counter electrode. WO3 was vacuum-evaporated on a glass substrate coated with indium tin oxide. A film of solid electrolyte, Sn(HPO4)2·H2O, was prepared by means of the spray method on the thin film of WO3. ECDs with metal electrodes were examined from the points of view of the change in optical density, the current-wave forms, and the response speeds in coloring and bleaching processes. ECD cells with noble metals indicated comparatively high optical density changes on coloration at a constant-voltage operation. The cell with Ag showed a high coloration speed compared with the cells containing graphite and other metals.

Method of making haze-free tin oxide coatings

Abstract: Haze-free tin oxide coatings are made from an organotin compound which ordinarily gives only hazy coatings. The improvement comprises first forming an undercoat of a haze-free tin oxide film on a substrate, preferably by decomposition of monophenyltin trichloride. Thereafter the tin oxide overcoating assumes the haze-free characteristics of the undercoat film.

Photoelectric conversion device

Abstract: PURPOSE:To realize an element of a high photoelectric conversion rate through prevention of loss of incident light by a method wherein a doped layer on the rear electrode side of a photoelectric conversion layer is thinner because of a light-transmitting spacer layer sandwiched between the photoelectric conversion layer and rear-side electrode. CONSTITUTION:Positioning a light-transmitting spacer layer between a photoelectric conversion laminate of layers 3-5 and a rear-side electrode 7 allows the doped layer 5 located nearer to the rear-side electrode 7, out of the layers 3-5 constituting the photoelectric conversion laminate, to be thinner. For example, on a light-transmitting glass substrate 1, a surface electrode 2 that is a 100nm-thick indium tin oxide layer, a photoelectric conversion laminate consisting of a 20nm-thick amorphous silicon hydride P layer 3 doped with boron and 800nm-thick amorphous silicon hydride I layer 4 and and 10nm-thick amorphous siliocn hydride N layer 5, a spacer layer 6 that is a 100nm-thick oxide layer of indium and tin, and a rear-side electrode 7 that is a 1mum-thick aluminum layer are deposited, in that order, for the manufacture of a solar cell.

Providing metallised pads on transparent electrically conductive tracks on glass substrates

Abstract: Transparent electrically conductve indium tin oxide tracks (2) upon a glass substrate (1) are provided with solderable metallised pads (3) using a conventional screen printed metal-loaded paste which is fired by local heating with a CO2 laser in order to avoid degrading the conductivity of the rest of the tracks.

Nonlinear two-terminal element

Abstract: PURPOSE:To facilitate extension of the area of a display panel and to simplify the producing method by forming a metal oxide thin film of a nonlinear two- terminal element consisting of three layers, namely, an electrode layer, the metal oxide thin film, and another electrode layer by the electrolytic deposition method. CONSTITUTION:A first electrode layer 11, a thin film layer 12 which is formed on the first electrode layer 11 by the electrolytic deposition method and contains a metal oxide, and a second electrode layer 14 formed on the second electrode layer 14 containing the metal oxide are provided. First and second electrode layers 11 and 14 consist of conductive films, and metallic thin films consisting of Cr, Ni, or the like formed by various methods such as the sputtering method and the spray method, transparent conductive films consisting of ITO (indium tin oxide), In2O3, or the like, or Ag paste, Cu paste, or the like where metallic particles are dispersed in a binder can be used as these conductive films. Thus, this method copes with mass production of elements in the active matrix system for large-area display, and the nonlinear two-terminal element is obtained which is produced by a small-sized equipment and has a low production cost.

Use of strippable coatings to protect and clean optical surfaces.

Abstract: Spray, dipped, or painted coatings are used to protect high quality optical surfaces from damage and to remove surface dirt when the coatings are removed. We have worked with two types of strippable coating to determine their effectiveness and ease of handling for such applications. To our knowledge, these are the only commercially available products. The objectives of these tests were threefold: (a) to judge the ability of two candidate coatings to remove dust and debris from an optical surface; (b) to make sure that the strippable coating itself left no contamination on the surface; and (c) to determine the ease of application and removal of the protective coating. Samples of optical parts that were coated in these tests were front surface mirrors, glass flats with AR, tin oxide, or indium tin oxide thin-film coatings, and blank glass plates as well. Two commercial coatings were tested, ×59 Black Strippable Coating, KE0002 and Strip Coating, KE0020, both manufactured by Universal Photonics of Hicksville NY. Coating material was slowly poured over the optical part in two or more applications to form eventually a thick-film layer. Slow feed rate, high surface tension, and viscosity helped prevent material from spilling over the edge of the component. Black Strippable Coating was the more viscous of the two materials and consequently easier to manage and regulate spreading over an optical part. This material dried without heating in ~15 min. On the other hand, the Strip Coating could have been heated to speed the drying phase. This was not done here since simplicity and convenience of use was an important feature. For both materials, however, the coated parts were allowed to dry at room temperature for at least 24 h. Several techniques were tried for removing the dry coating from the optical part, such as peeling by hand or impregnating a string or cloth strip into a thick coating layer while it remained tacky. We found that the most reliable way to remove the dry coating was to put duct tape to the top of the dry coating film. The coating adhered to the duct tape and was stripped from the component as the tape was peeled away from the sample. The tape had to be held at a shallow angle to the plane of the sample and pulled with a steady motion. (Figures 1-3 illustrate this method of removing the