Showing papers on "Solar cell published in 2023"

An extensive study on multiple ETL and HTL layers to design and simulation of high-performance lead-free CsSnCl3-based perovskite solar cells

Abstract: Cesium tin chloride (CsSnCl3) is a potential and competitive absorber material for lead-free perovskite solar cells (PSCs). The full potential of CsSnCl3 not yet been realized owing to the possible challenges of defect-free device fabrication, non-optimized alignment of the electron transport layer (ETL), hole transport layer (HTL), and the favorable device configuration. In this work, we proposed several CsSnCl3-based solar cell (SC) configurations using one dimensional solar cell capacitance simulator (SCAPS-1D) with different competent ETLs like indium-gallium-zinc-oxide (IGZO), tin-dioxide (SnO2), tungsten disulfide (WS2), ceric dioxide (CeO2), titanium dioxide (TiO2), zinc oxide (ZnO), C60, PCBM, and HTLs of cuprous oxide (Cu2O), cupric oxide (CuO), nickel oxide (NiO), vanadium oxide (V2O5), copper iodide (CuI), CuSCN, CuSbS2, Spiro MeOTAD, CBTS, CFTS, P3HT, PEDOT:PSS. Simulation results revealed that ZnO, TiO2, IGZO, WS2, PCBM, and C60 ETLs-based halide perovskites with ITO/ETLs/CsSnCl3/CBTS/Au heterostructure exhibited outstanding photoconversion efficiency retaining nearest photovoltaic parameters values among 96 different configurations. Further, for the six best-performing configurations, the effect of the CsSnCl3 absorber and ETL thickness, series and shunt resistance, working temperature, impact of capacitance, Mott-Schottky, generation and recombination rate, current-voltage properties, and quantum efficiency on performance were assessed. We found that ETLs like TiO2, ZnO, and IGZO, with CBTS HTL can act as outstanding materials for the fabrication of CsSnCl3-based high efficiency (η ≥ 22%) heterojunction SCs with ITO/ETL/CsSnCl3/CBTS/Au structure. The simulation results obtained by the SCAPS-1D for the best six CsSnCl3-perovskites SC configurations were compared by the wxAMPS (widget provided analysis of microelectronic and photonic structures) tool for further validation. Furthermore, the structural, optical and electronic properties along with electron charge density, and Fermi surface of the CsSnCl3 perovskite absorber layer were computed and analyzed using first-principle calculations based on density functional theory. Thus, this in-depth simulation paves a constructive research avenue to fabricate cost-effective, high-efficiency, and lead-free CsSnCl3 perovskite-based high-performance SCs for a lead-free green and pollution-free environment.

Numerical simulation and optimization of CsPbI3-based perovskite solar cell to enhance the power conversion efficiency

Abstract: In this study, we investigated the potential of CsPbI3 as an absorber material for use in perovskite solar cells (PSCs). To optimize the device, we used TiO2 as the electron...

Halide Composition Engineered a Non-Toxic Perovskite–Silicon Tandem Solar Cell with 30.7% Conversion Efficiency

Abstract: Since the conversion efficiency of silicon (Si)-based solar cells stagnates at 26.7% in the literature, extensive research and development activities are carried out on perovskite silicon-based tandem solar cells. However, the presence of lead (Pb) and the instability of perovskite prevent their large-scale implementation in the photovoltaic industry. Therefore, it is important to replace the hazardous material (Pb) in perovskite top cells to design non-toxic perovskite–silicon tandem solar cells. The current work yields much-needed studies to develop a non-toxic perovskite–silicon-based tandem solar cell. For the first time, methylammonium tin mixed halide (MASnI3–xBrx)-based materials are comprehensively investigated and optimized with respect to different halide compositions, absorber layer thickness, and bulk defect density in standalone configurations, followed by the development of a lead-free MASnI2Br1–Si-based tandem solar cell. The transfer matrix method and current matching techniques are used to design the two-terminal monolithic tandem cell, which showed a maximum conversion efficiency of 30.7% with an open circuit voltage (VOC) of 2.14 V. The results outlined in this manuscript will pave the way for the progress of highly efficient, non-toxic perovskite–silicon tandem solar cells.

19.31% binary organic solar cell and low non-radiative recombination enabled by non-monotonic intermediate state transition

Abstract: Non-fullerene acceptors based organic solar cells represent the frontier of the field, owing to both the materials and morphology manipulation innovations. Non-radiative recombination loss suppression and performance boosting are in the center of organic solar cell research. Here, we developed a non-monotonic intermediate state manipulation strategy for state-of-the-art organic solar cells by employing 1,3,5-trichlorobenzene as crystallization regulator, which optimizes the film crystallization process, regulates the self-organization of bulk-heterojunction in a non-monotonic manner, i.e., first enhancing and then relaxing the molecular aggregation. As a result, the excessive aggregation of non-fullerene acceptors is avoided and we have achieved efficient organic solar cells with reduced non-radiative recombination loss. In PM6:BTP-eC9 organic solar cell, our strategy successfully offers a record binary organic solar cell efficiency of 19.31% (18.93% certified) with very low non-radiative recombination loss of 0.190 eV. And lower non-radiative recombination loss of 0.168 eV is further achieved in PM1:BTP-eC9 organic solar cell (19.10% efficiency), giving great promise to future organic solar cell research.

Control of the phase evolution of kesterite by tuning of the selenium partial pressure for solar cells with 13.8% certified efficiency

Abstract: Phase evolution during the selenization is crucial for high-quality kesterite Cu2ZnSn(S, Se)4 (CZTSSe) absorbers and efficient solar cells. Herein, we regulate kinetic process of phase evolution from Cu+-Sn4+-MOE (MOE: 2-methoxyethanol) system by precisely controlling positive chamber pressure. We found that, at the heating-up stage, Se vapor concentration is intentionally suppressed in low-temperature region, which effectively reduces collision probability between the CZTS and Se atoms, thus remarkably inhibiting formation of secondary phases on the surface and multiple-step phase evolution processes. This strategy enables the phase evolution to start at relatively higher temperature and thereby leading to high crystalline quality CZTSSe absorber with fewer defects, and corresponding CZTSSe solar cell can present 14.1% efficiency (total area), which is the highest result so far. This work provides important insights into selenization mechanism of CZTSSe absorbers and explores a new way of kinetic regulation strategy to simplify the phase evolution path to efficient CZTSSe solar cells.

Numerical analysis of FeSi2 based solar cell with PEDOT:PSS hole transport layer

Abstract: Recently, most of the researchers are showing their interest on Iron di-silicide (FeSi2) based solar cell because, it is an excellent and promising light absorbing material for solar cell applications because of its remarkable characteristics. The inappropriateness of device structure, band alignment at the BSF/absorber and absorber/buffer interface, as well as carrier recombination at the rear and front contact, prevents the expected result from being achieved. The primary goal of this study is to enhance the performance of uniquely designed Al/ITO/CdS/FeSi2/PEDOT:PSS/Au solar cell and to scope out the influence of the PEDOT:PSS HTL layer on the performance parameters of open circuit voltage (Voc), short circuit current (Jsc), fill factor (FF), and power conversion efficiency (PCE). The photovoltaic (PV) performance of the proposed photovoltaic cell has been simulated utilizing SCAPS-1D software. In this simulation, the defect densities of each layer and interface defect between HTL/absorber and absorber/buffer have been added. The impact of the variation of thickness, carrier concentration, electron affinity of the HTL layer, shunt and series resistance, operating temperature, and surface recombination velocity (SRV) on the performance parameters have been studied to avail the better performance. The PCE of 39.44 %, Voc of 938 mV, Jsc of 51.58 mA/cm2 and FF of 81.48 % of the proposed SC have been determined with FeSi2 absorber layer thickness and carrier concentration of 300 nm and 1014 cm−3, correspondingly. The results of this research recommend the guidelines for temperature stable, environment friendly, low cost, and high efficiency FeSi2-based SC.

Hole-Transporting Self-Assembled Monolayer Enables Efficient Single-Crystal Perovskite Solar Cells with Enhanced Stability

Abstract: The difficulty of growing perovskite single crystals in configurations suitable for efficient photovoltaic devices has hampered their exploration as solar cell materials, despite their potential to advance perovskite photovoltaic technology beyond polycrystalline films through markedly lower defect densities and desirable optoelectronic properties. While polycrystalline film absorbers can be deposited on myriad substrates, perovskite single crystals fit for high-efficiency devices have only been demonstrated on hydrophobic hole-transport layers [HTLs, e.g., poly(triaryl amine) (PTAA)], which has severely restricted the avenues for enhancing device efficiency and stability. Herein, we report the growth of mixed-cation FA0.6MA0.4PbI3 perovskite single crystals on a hydrophilic self-assembled monolayer {SAM, [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid), (MeO-2PACz)} HTL surface. Compared with PTAA, the MeO-2PACz SAM promotes the mechanical adhesion of the perovskite on the substrate, enabling the fabrication of inverted solar cells with substantially enhanced operational stability and power conversion efficiencies of up to 23.1%, setting a new benchmark for single-crystal perovskite solar cells.

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin‐Film Solar Cell

Abstract: Exhibiting outstanding optoelectronic properties, antimony selenide (Sb2Se3) has attracted considerable interest and has been developed as a light absorber layer for thin‐film solar cells over the decade. However, current state‐of‐the‐art Sb2Se3 devices suffer from unsatisfactory “cliff‐like” band alignment and severe interface recombination loss, which deteriorates device performance. In this study, the heterojunction interface of an Sb2Se3 solar cell is improved by introducing effective aluminum (Al3+) cation into the CdS buffer layer. Then, the energy band alignment of Sb2Se3/CdS:Al heterojunction is modified from a “cliff‐like” structure to a “spike‐like” structure. Finally, heterojunction interface engineering suppresses recombination losses and strengthens carrier transport, resulting in a high efficiency of 8.41% for the substrate‐structured Sb2Se3 solar cell. This study proposes a facile strategy for interfacial treatment and elucidates the related carrier transport enhancement mechanism, paving a bright avenue to overcome the efficiency bottleneck of Sb2Se3 thin‐film solar cells.

Performance Enhancement of an MoS2-Based Heterojunction Solar Cell with an In2Te3 Back Surface Field: A Numerical Simulation Approach

Abstract: Researchers are currently showing interest in molybdenum disulfide (MoS2)-based solar cells due to their remarkable semiconducting characteristics. The incompatibility of the band structures at the BSF/absorber and absorber/buffer interfaces, as well as carrier recombination at the rear and front metal contacts, prevents the expected result from being achieved. The main purpose of this work is to enhance the performance of the newly proposed Al/ITO/TiO2/MoS2/In2Te3/Ni solar cell and investigate the impacts of the In2Te3 BSF and TiO2 buffer layer on the performance parameters of open-circuit voltage (VOC), short-circuit current density (JSC), fill factor (FF), and power conversion efficiency (PCE). This research has been performed by utilizing SCAPS simulation software. The performance parameters such as variation of thickness, carrier concentration, the bulk defect concentration of each layer, interface defect, operating temperature, capacitance–voltage (C–V), surface recombination velocity, and front as well as rear electrodes have been analyzed to achieve a better performance. This device performs exceptionally well at lower carrier concentrations (1 × 1016 cm–3) in a thin (800 nm) MoS2 absorber layer. The PCE, VOC, JSC, and FF values of the Al/ITO/TiO2/MoS2/Ni reference cell have been estimated to be 22.30%, 0.793 V, 30.89 mA/cm2, and 80.62% respectively, while the PCE, VOC, JSC, and FF values have been determined to be 33.32%, 1.084 V, 37.22 mA/cm2, and 82.58% for the Al/ITO/TiO2/MoS2/In2Te3/Ni proposed solar cell by introducing In2Te3 between the absorber (MoS2) and the rear electrode (Ni). The proposed research may give an insight and a feasible way to realize a cost-effective MoS2-based thin-film solar cell.

Lowering Cost Approach for CIGS-Based Solar Cell Through Optimizing Band Gap Profile and Doping of Stacked Active Layers—SCAPS Modeling

Abstract: In this research article, we carry out investigation on compensating the efficiency loss in thin-film CIGS photovoltaic (PV) cell due to absorber coat depth reduction. We demonstrate that the efficiency loss is mainly caused by the disruption of the charge-carrier transport. We propose an architecture engineered with a stepped band gap profile for improving the efficiency of charge-carrier transport and collection. By modifying the gallium content, we tuned the band gap profile of the active layer of a reference experimental cell from which we previously collected all parameters. Using the simulator environment SCAPS-1D, we modeled a three-steps stacking profile of active layer with different gallium contents from one layer to another. Based on the results obtained, the band gap configuration herein proposed appears to be a prospective strategy for high-performance ultrathin Cu(In,Ga)Se2-based PV cell architecture engineering. By combining this approach with the optimization of the active layer doping, we enhanced the yields of the reference structure from 18.93% for a 2 μm active layer to 23.36% for only 0.5 μm thickness of active layer, that is, an enhancement of 4.4%. The fill factor increased from 73.24 to 81.73%, that is, an additional stability indicator value of 8.5%. The good values of the obtained efficiency and the improvement of the fill factor value are relevant indicators of a stable device. Active layer stacking combined with a stepped band gap profile and doping level optimization is definitely providing new perspectives in thin-film CIGS high-performance PV cell achievement.

Challenges and Progress in Lead‐Free Halide Double Perovskite Solar Cells

Abstract: Lead‐free halide double perovskites (HDPs) with a chemical formula of A2B+B3+X6 are booming as attractive alternatives to solve the toxicity issue of lead‐based halide perovskites (APbX3). HDPs show excellent stability, a wide range of possible combinations, and attractive optoelectronic features. Although a number of novel HDPs have been studied, the power conversion efficiency of the state‐of‐the‐art double perovskite solar cell is still far inferior to that of the dominant Pb‐based ones. Understanding the fundamental challenges is essential for further increasing device efficiency. In this review, HDPs with attractive electronic and optical properties are focused on, and current challenges in material properties and device fabrication that limit high‐efficiency photovoltaics are analyzed. Finally, the promising approaches and views to overcome these bottlenecks are highlighted.

Effective defect passivation with a designer ionic molecule for high-efficiency vapour-deposited inorganic phase-pure CsPbBr3 perovskite solar cells

Abstract: Effective passivation of defects by a designer ionic liquid enables significantly lowered trap density in vapor deposited CsPbBr3, thus achieving highest PV cell efficiencies: 11.21% (0.04 cm2) and 9.18% (1 cm2).

Remarkable Stability and Optoelectronic Properties of an All-Inorganic CsSn0.5Ge0.5I3 Perovskite Solar Cell.

Abstract: Sn-Ge mixed perovskites have been proposed as promising lead-free candidates in the photovoltaics (PV) field. In this work, we discovered a stable P1 phase Sn-Ge mixed structure (CsSn0.5Ge0.5I3) with an appropriate band gap value of 1.19 eV, which manifests its unique structural stability and physics properties. The thermodynamic stability of this mixed structure under different growth conditions and all possible native defects are depicted in detail. The formation energies and dominant native point defects indicate that P1 phase CsSn0.5Ge0.5I3 exhibits unipolar self-doping behavior (p-type conductivity) and good defect tolerance while the growth condition changes. In addition, the calculation of light absorption confirmed that the P1 phase has a higher light absorption coefficient than that of MAPbI3 in the visible light range, showing excellent light absorption. Our work not only provides theoretical guidance for unraveling the unusual structural stability of Sn-Ge mixed perovskites, but also offers a useful scheme to modulate the stability and optoelectronic properties of Ge-based perovskites through alloy engineering.

Modifying electronic bandgap by halide ions substitution to investigate double perovskites Rb2AgInX6 (X = Cl, Br, I) for solar cells applications and thermoelectric characteristics

Abstract: The demand for renewable and clean energy increases the significance of perovskites and attracts the substantial interest of the scientific community to further explore these materials owing to their excellent optoelectronic characteristics. In this regards, a DFT-approach was employed to investigate double perovskite’s “Rb2AgInX6 (X = Cl, Br, I)” structural, electronic, optical and thermoelectric properties. To prove the structural and thermodynamic stability, the tolerance factor (tF) and formation energy (ΔHf) were computed whose values falls within acceptable stable region. Based on the band structure (BS) calculations, the compounds demonstrate direct band gaps of the values of 2.16 eV, 1.32 eV, and 0.46 eV for anions Cl, Br, and I based-double perovskites, respectively. The band gap of 1.32 eV of Rb2AgInBr6 is ideal for exploring this compound for solar cell applications. Furthermore, to study optical characteristics, the investigated compounds were explored in terms of optical absorption, refractive index, and dielectric constants for energy range 0–6 eV which ensured the absorption among infrared, visible, and ultraviolet regions. Based on maximum absorption for visible region, the studied compound Rb2AgInCl6 is an excellent candidate to harvest solar cell applications, among others. Furthermore, the Seebeck coefficient, lattice thermal and electric conductivities, and figure of merit (ZT) addressed by Boltzmann theory also make them decent aspirants for thermoelectric applications.

A Comprehensive Study on RbGeI3 based Inorganic Perovskite Solar Cell using Green Synthesized CuCrO2 as Hole Conductor

Abstract: Though perovskite solar cell (PSC) is achieving an immense 25.7 % efficiency within a few years of extensive research, a shorter life span with organic part and charge transporting layers hinders their commercialization. So, inorganic perovskite aligned with the hole transporting layer (HTL) could be an alternative to achieve long-term device stability. The delafossite, CuCrO2 was prepared by the green synthesized method and then characterized. According to the X-ray diffraction (XRD) pattern, the crystallites are polycrystalline phases, and the average crystallite size is 159.3 nm. Spectrophotometric measurement was used to determine the bandgap (Eg), which is 3.0 eV. These results are applied for simulation study in Pb-free RbGeI3-based inorganic perovskite device using CuCrO2 as HTL. HTL thickness, diffusion length, interface defect, carrier concentration, activation energy, and temperature effects on the device performance have been explored by SCAPS-1D simulation software. In the optimized condition, the simulated result shows the maximum device efficiency is 23.8 %, corresponding open circuit voltage (Voc), short circuit current density (Jsc) and fill-factor (FF) of 0.89 V, 33.7 mA cm−2, and 79.2 %, respectively. A study of activation energy for the device elucidates that the significant recombination is Shockley Read Hall (SRH) type at the (RbGeI3/CuCrO2) interface layer. The result of temperature impact has supported better thermal stability. Indium tin oxide (ITO) is suitable front contact for the proposed p-i-n structure. The study reveals that the delafossite, CuCrO2 can be a potential HTL for Pb-free inorganic perovskite solar cells.

24.64%‐Efficiency MA‐Free Perovskite Solar Cell with Voc of 1.19 V Enabled by a Hinge‐Type Fluorine‐Rich Complex

Abstract: High density of defects at interface severely affects the performance of perovskite solar cells (PSCs). Herein, cobalt (II) hexafluoro‐2,4‐pentanedionat (CoFAc), a hinge‐type fluorine‐rich complex, is introduced onto the surface of formamidinium cesium lead iodide (FACsPbI3) film to address the issues of perovskite/Spiro‐OMeTAD interface. The existence of CoFAc passivates both organic cation and halide anion vacancies by establishing powerful hydrogen bonds with HC(NH2)2+ (FA+) and strong ionic bonds with Pb2+ in perovskite films. In addition, CoFAc serves as a connecting link to enhance interfacial hole‐transport kinetics via interacting with Spiro‐OMeTAD. Consequently, FACsPbI3 PSCs with CoFAc modification display a champion power conversion efficiency (PCE) of 24.64% with a charming open‐circuit voltage (VOC) of 1.191 V, which is the record VOC among all the reported organic‐inorganic hybrid PSCs with TiO2 as electron transport layer. Furthermore, CoFAc‐modified devices exhibit an outstanding long‐term stability, which can maintain 95% of their initial PCEs after exposure to ambient atmosphere for 1500 h without any encapsulation.