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A. F. Tsatsul’nikov
Researcher at Russian Academy of Sciences
Publications - 224
Citations - 3518
A. F. Tsatsul’nikov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 28, co-authored 224 publications receiving 3388 citations. Previous affiliations of A. F. Tsatsul’nikov include Technical University of Berlin & Saint Petersburg State University of Information Technologies, Mechanics and Optics.
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Journal ArticleDOI
Quantum dot lasers: breakthrough in optoelectronics
Dieter Bimberg,Marius Grundmann,Frank Heinrichsdorff,Nikolai N. Ledentsov,Victor M. Ustinov,A. E. Zhukov,A. R. Kovsh,Mikhail V. Maximov,Y.M. Shernyakov,B. V. Volovik,A. F. Tsatsul’nikov,P. S. Kop’ev,Zh. I. Alferov +12 more
TL;DR: In this article, the authors used the concept of electronically-coupled quantum dots (QDs) and oxide-defined 10 μm apertures for surface-emitting QD lasers (300 K).
Journal ArticleDOI
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
Mikhail V. Maximov,A. F. Tsatsul’nikov,B. V. Volovik,D. S. Sizov,Yu. M. Shernyakov,I.N. Kaiander,A. E. Zhukov,A. R. Kovsh,S. S. Mikhrin,Victor M. Ustinov,Zh. I. Alferov,R. Heitz,Vitaly Shchukin,Nikolai N. Ledentsov,Dieter Bimberg,Yu. G. Musikhin,Wolfgang Neumann +16 more
TL;DR: In this article, a model of self-organized quantum dots overgrown with an InGa(Al)As alloy layer is investigated as a means to control the structural and electronic properties.
Journal ArticleDOI
1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition
Yu. M. Shernyakov,D. A. Bedarev,E.Yu. Kondrat'eva,P. S. Kop’ev,A. R. Kovsh,Nikolay A. Maleev,Mikhail V. Maximov,S. S. Mikhrin,A. F. Tsatsul’nikov,V. M. Ustinov,B. V. Volovik,A. E. Zhukov,Zh. I. Alferov,N. N. Ledentsov,Dieter Bimberg +14 more
TL;DR: In this paper, low threshold current density (Jth = 65 A/cm2) operation near 1.3 µm at room temperature (RT) was realized for lasers using InAs/InGaAs/GaAs quantum dots (QDs).
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Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
A. E. Zhukov,A. R. Kovsh,Nikolay A. Maleev,S. S. Mikhrin,V. M. Ustinov,A. F. Tsatsul’nikov,Mikhail V. Maximov,B. V. Volovik,D. A. Bedarev,Yu. M. Shernyakov,P. S. Kop’ev,Zh. I. Alferov,N. N. Ledentsov,Dieter Bimberg +13 more
TL;DR: An InAs quantum dot array covered by a thin InGaAs layer was used as the active region of diode lasers grown by molecular beam epitaxy on GaAs substrates as mentioned in this paper.
Journal ArticleDOI
Quantum dot origin of luminescence in InGaN-GaN structures
Igor Krestnikov,N. N. Ledentsov,Axel Hoffmann,Dieter Bimberg,A. V. Sakharov,W. V. Lundin,A. F. Tsatsul’nikov,A. S. Usikov,Zh. I. Alferov,Yu. G. Musikhin,Dagmar Gerthsen +10 more
TL;DR: In this article, a resonant photoluminescence (PL) of InGaN inclusions in a GaN matrix was reported, where the structures were grown on sapphire substrates using metal-organic chemical vapor deposition.