Showing papers by "Amnon Yariv published in 1982"
TL;DR: In this article, the authors report the demonstration of several new optical oscillator configurations including a unidirectional ring oscillator and a self-pumped phase conjugate mirror.
Abstract: We report here the demonstration of several new optical oscillator configurations including a unidirectional ring oscillator and a self‐pumped phase conjugate mirror. The gain medium is BaTiO3, pumped by a 632.8‐nm He‐Ne laser at power levels down to 50 μW.
275 citations
TL;DR: In this article, a model based on conventional rate equations with a linear gain dependence on carrier density explains the observed behavior and suggests a new mechanism in inhomogeneously pumped diode lasers for light-jumps and pulsations which does not depend on the condition for the usually proposed repetitively Q -switching.
Abstract: Bistability and pulsation at microwave frequencies are observed in CW GaAs semiconductor lasers with inhomogeneous current injection. Inhomogeneous current injection is achieved with a segmented contact structure. Crucial to the understanding of the characteristics of this device is the discovery of a negative differential electrical resistance across the contacts of the absorbing section. Depending on the electrical bias condition, this negative differential resistance leads to bistability or light-jumps and self pulsations. A simple model based on conventional rate equations with a linear gain dependence on carrier density explains the observed behavior and suggests a new mechanism in inhomogeneously pumped diode lasers for light-jumps and pulsations which does not depend on the condition for the usually proposed repetitively Q -switching. Investigation of the switching dynamics of this bistable optoelectronic device reveals a delay time which is critically dependent on the trigger pulse amplitude and typically on the order of a few nanoseconds with power-delay products of 100 pJ. The observed critical slowing down and its origin is discussed. We also report on the characteristic of this laser coupled to an external optical cavity and we demonstrate successfully that this bistable laser can be used as a self coupled stylus for optical disk readout with an excellent signal to noise ratio.
147 citations
TL;DR: In this paper, the noise equivalent circuit of a semiconductor laser diode is derived from the rate equations including Langevin noise sources, and the intrinsic junction voltage noise spectrum and the light intensity fluctuation of a current driven diode are calculated as a function of bias current and frequency.
Abstract: The noise equivalent circuit of a semiconductor laser diode is derived from the rate equations including Langevin noise sources. This equivalent circuit allows a straightforward calculation of the noise and modulation characteristics of a laser diode combined with electronic components. The intrinsic junction voltage noise spectrum and the light intensity fluctuation of a current driven laser diode are calculated as a function of bias current and frequency.
116 citations
TL;DR: It is found that a phase-conjugate mirror with depleted pumps may exhibit bistability, and an exact solution of a nonlinear model of holographic four-wave mixing is derived.
Abstract: An exact solution of a nonlinear model of holographic four-wave mixing is derived. An expression for the reflectivity of a phase-conjugate mirror with depleted pumps is presented. We find that such a phase-conjugate mirror may exhibit bistability.
104 citations
TL;DR: In this article, a phase conjugate mirror based on real-time holography in materials which allow a spatial phase shift between the refractive index grating and the light interference pattern was investigated.
Abstract: We report the results of a theoretical and experimental investigation of a passive (self-pumped) phase conjugate mirror. This device is based on real time holography in materials which allow a spatial phase shift between the refractive index grating and the light interference pattern. An imaging experiment is reported showing the phase conjugating nature of the device. The holographic medium used was a single crystal of barium titanate.
91 citations
TL;DR: In this article, a simple theoretical study of the linear electro-optic effect is presented based on the single energy-gap model, the dielectric theory and the concepts of bond charge and effective ionic charge.
Abstract: A simple theoretical study of the linear electro-optic effect is presented. This semiclassical approach is based on the single-energy-gap model, the dielectric theory and the concepts of bond charge and effective ionic charge. A general expression is obtained for the electro-optic coefficient of a crystal and is applied to a wide variety of diatomic and ternary compounds including zincblende (GaAs, GaP, ZnSe, ZnS, ZnTe, CuCl), wurtzite (ZnS, CdS, CdSe), quartz (SiO2), lithium niobate (LiNbO3, LiTaO3), KDP (KH2PO4, KD2PO4, NH4H2PO4), chalcopyrite (AgGaS2, CuGaS2) and proustite (Ag3AsS3). The calculated results are generally in good agreement with experiment.
76 citations
TL;DR: In this article, a novel laser resonator with the ability to correct for intracavity phase distortions is presented, which employs a passive (self-pumped) phase conjugate reflector to provide this capability.
Abstract: We report here a novel laser resonator with the ability to correct for intracavity phase distortions. The optical cavity employs a passive (self-pumped) phase conjugate reflector to provide this capability.
72 citations
TL;DR: In this paper, the use of Sr1−x Bax Nb2O6 as an efficient holographic four-wave mixing medium was reported, which was used in a continuous wave phase conjugate mirror with reflectivity exceeding unity.
Abstract: We report the use of Sr1−x Bax Nb2O6 as an efficient holographic four‐wave mixing medium. We have used this material in a continuous wave phase conjugate mirror with reflectivity exceeding unity, and in a phase conjugate resonator.
72 citations
TL;DR: In this article, a technique for microcleaving a suspended heterostructure cantilever by ultrasonic vibrations has been developed for AlGaAs lasers without cleaving the substrate.
Abstract: A technique has been developed for cleaving the mirrors of AlGaAs lasers without cleaving the substrate. Micro‐cleaving involves cleaving a suspended heterostructure cantilever by ultrasonic vibrations. Lasers with microcleaved mirrors have threshold currents and quantum efficiencies identical to those of similar devices with conventionally cleaved mirrors.
67 citations
TL;DR: In this paper, the various elements which constitute the integrated optoelectronic circuits (IOEC's) with emphasis on the structure of GaAlAs injection lasers are reviewed and several integrated circuits on GaAs substrates are described in detail.
Abstract: Monolithic integrated optoelectronic circuits, which incorporate electronic and optical devices on the same substrate, have the advantages of smaller size, and potentially higher reliability compared with conventional hybrid circuits. In addition, significant improvements in the speed and noise performance of communication systems can be realized. This paper reviews the various elements which constitute the integrated optoelectronic circuits (IOEC's) with emphasis on the structure of GaAlAs injection lasers. Several integrated circuits on GaAs substrates are described in detail. A view of optoelectronic circuits in other III-V compounds is presented.
66 citations
TL;DR: A proposal and an analysis are presented for imaging through a distorting medium using field multiplication by four-wave mixing to study the properties of Na6(CO3)2, Na2SO4, and Na2CO3 in soda ash.
Abstract: A proposal and an analysis are presented for imaging through a distorting medium using field multiplication by four-wave mixing.
TL;DR: In this article, the authors demonstrate one-way optical field imaging through a distorting medium using a four-wave mixing implementation of real-time holography, where information can be transmitted at an arbitrarily fast rate as long as the mixing medium can respond to changes in the distortion.
Abstract: We demonstrate one‐way optical field imaging through a distorting medium using a four‐wave mixing implementation of real‐time holography. Information can be transmitted at an arbitrarily fast rate as long as the mixing medium can respond to changes in the distortion.
TL;DR: In this paper, a new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed, where electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers.
Abstract: A new structure for III-V avalanche photodetectors in which multiplication is dominated by a single-carrier type is proposed. Calculations for a GaAs-AlGaAs detector are reported predicting multiplication dominated by electrons. The reason for this is that electrons are injected into GaAs multiplication layers from high-electric-field AlGaAs layers, while holes are injected into the GaAs layers from low-electric-field AlGaAs layers.
TL;DR: In this article, a large optical cavity buried heterostructure window laser with only the transparent AlGaAs waveguiding layers, and not the active layer, extend to the laser mirrors has been fabricated.
Abstract: Large optical cavity buried heterostructure window lasers in which only the transparent AlGaAs waveguiding layers, and not the active layer, extend to the laser mirrors have been fabricated. These lasers have threshold currents and differential quantum efficiencies comparable to those of regular large optical cavity buried heterostructure lasers in which the active region extends to the laser mirrors, however the window lasers have been operated under pulsed conditions at three times the power at which otherwise identical lasers without windows degrade by catastrophic mirror damage.
TL;DR: In this paper, the interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has been calculated and it is found that the Auger rate is much reduced in the quasi two-dimensional quantum well lasers.
Abstract: Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has been calculated. It is found that the Auger rate is much reduced in the quasi two-dimensional quantum-well lasers. This suggests that the temperature sensitivity of quantum-well InGaAsP lasers is much less than ordinary structures with much higher values of T 0 at around room temperatures.
TL;DR: In this article, a very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field effect transistor on a semi-insulating substrate.
Abstract: A very low threshold GaAlAs buried heterostructure laser has been monolithically integrated with a recessed structure metal-semiconductor field-effect transistor on a semi-insulating substrate. At cw operation, the device has a direct modulation bandwidth of at least 4 GHz.
TL;DR: In this article, a buried heterostructure laser with a segmented contact to achieve inhomogeneous gain is presented, where the authors reveal a negative differential resistance over the absorbing section, which can lead to bistability with a very large hysteresis in the light-current characteristic without self-pulsation or a small hystresis with selfpulsations at microwave frequencies.
Abstract: Experimental results of a buried heterostructure laser with a segmented contact to achieve inhomogeneous gain are presented. Measurements reveal a negative differential resistance over the absorbing section. Depending on the source impedance of the dc current source driving the absorbing section, this negative resistance can lead to (i) bistability with a very large hysteresis in the light-current characteristic without self-pulsation or (ii) a small hysteresis with self-pulsations at microwave frequencies. An analysis, which includes the electrical part of the device, leads to an explanation of self-pulsations in inhomogeneously pumped lasers without having to rely on a sublinear gain dependence on injected carrier concentration.
TL;DR: In this article, the authors report the observation of picosecond optical pulses and unusual pulse structures from optically pumped buried heterostructure semiconductor lasers and a model which considers the hot electron and hole energy distributions dynamically accounts well for their experimental findings.
Abstract: We report the observation of picosecond optical pulses and unusual pulse structures from optically pumped buried heterostructure semiconductor lasers A model which considers the hot electron and hole energy distributions dynamically accounts well for our experimental findings The results are relevant to the problem of the limiting response time of semiconductor lasers
TL;DR: In this paper, a single liquid phase epitaxy (LPE) growth process was used for the integration of 1.3-μm groove lasers and metal-insulator-semiconductor field effect transistors (MISFETs).
Abstract: Monolithic integration of 1.3‐μm groove lasers and metal‐insulator‐semiconductor field‐effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300‐μm cavity length are obtained. MIS depletion mode FET’s with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current.
TL;DR: In this article, a new mathematical formalism based on a coupled-mode approach is presented to describe light propagation in birefringent optically active crystals, where an arbitrary light wave in the medium is represented as an expansion in terms of linearly polarized eigenmodes.
Abstract: A new mathematical formalism, based on a coupled-mode approach, is presented to describe light propagation in birefringent optically active crystals. An arbitrary light wave in the medium is represented as an expansion in terms of linearly polarized eigenmodes; explicit solutions of the equations for the coupled-wave amplitudes show how power is transferred between the principal components in the presence of optical activity. The (generally elliptically polarized) eigenmodes of the optically active crystal are also derived by a diagonalization of the coupled-mode equations. The analysis is extended to include electro-optic crystals, yielding a more general, complex coupling parameter. The predictions of the theory are in excellent agreement with spectral-transmission measurements in AgGaS2 near its isoindex point at 497 nm.
TL;DR: In this paper, a mathematical analysis is presented for dye laser amplifier chains used to amplify cw mode-locked dye laser pulses up to the gigawatt regime, and some experimental results are presented to support the mathematical model.
Abstract: A mathematical analysis is presented for dye laser amplifier chains used to amplify cw mode‐locked dye laser pulses up to the gigawatt regime. The model permits a discussion of the important aspects of the problem such as gain saturation, pulse shaping, and the optimization of pumping efficiencies. Experimentally, an amplifier chain has been demonstrated which is simple in design and operation without sacrificing high performance. A frequency doubled Q‐switched Nd:YAG oscillator alone is used to longitudinally pump three identical Brewster cells with the same flowing dye solution in each. The amplifier boosts the output of a synchronously mode‐locked dye laser to obtain ∼0.5 mJ≲1 psec pulses over a ∼400 A bandwidth. These pulses are suitable for efficient Raman shifting, frequency mixing, and continuum generation to vastly extend the spectral range of the system. Some experimental results are presented to support the mathematical model.
Patent•
21 Dec 1982TL;DR: In this article, a self-pumped phase conjugate mirror is used to reflect back a coherent incident beam diffracted by a nonlinear polarization medium, either of the refractive type (effective nonlinear) or the actual nonlinear type, with an optical system of one or more mirrors.
Abstract: A passive (self-pumped) phase conjugate mirror uses a third-order nonlinear polarization medium, either of the refractive type (effective nonlinear) or the actual nonlinear type, with an optical system of one or more mirrors to reflect back through the medium a coherent incident beam diffracted by the medium. With two mirrors, they may be aligned to form a linear optical cavity containing the nonlinear medium, or they may be so oriented on one side of the medium that the incident beam transmitted through the medium is reflected back through the medium at an angle with the incident beam, and diffracted light from the incident beam is reflected back through the medium in the opposite direction coincident with the incident beam. A passive phase conjugate mirror may replace an end mirror of an optical cavity for a laser gain medium. Phase distortions of the laser beam in the laser cavity are corrected by the passive phase conjugate mirror.
TL;DR: The versatility of degenerate four-wave mixing has made possible its application to two major areas of spatial information processing: distortion correction and mathematical operations.
Abstract: The versatility of degenerate four-wave mixing (D4WM) has made possible its application to two major areas of spatial information processing: distortion correction and mathematical operations. The first area can be divided into predetection and postdetection processing. Distortions can be compensated for before the imaging. process by exploiting the phase-conjugating capability of D4WM. Phase-conjugate mirrors (PCM's) may also find use in optical processors designed to remove distortions after the imaging process is complete and the object is no longer available. Examples of linear operations that can be implemented using the nonlinear optics of D4WM are image convolution and correlation. An example of a nonlinear mathematical operation that can be implemented using D4WM is edge detection of two-dimensional images.
TL;DR: In this paper, a theory of longitudinal mode lasing spectrum of semiconductor lasers is developed which takes into account the nonuniform carrier and photon distributions and local gain spectrum shifts inside lasers with low end mirror reflectivities.
Abstract: A theory of longitudinal mode lasing spectrum of semiconductor lasers is developed which takes into account the nonuniform carrier and photon distributions and local gain spectrum shifts inside lasers with low end mirror reflectivities. The theory gives results consistent with observed longitudinal mode behavior in lasers with reduced facet reflectivity.
TL;DR: The use of nonlinear optical techniques for the temporal processing of information encoded as envelopes on electromagnetic fields is discussed and applications using all-optical interactions in the areas of signal processing, radar, and communication systems are considered.
Abstract: The use of nonlinear optical techniques for the temporal processing of information encoded as envelopes on electromagnetic fields is discussed. Applications using these all-optical interactions in the areas of signal processing, radar, and communication systems are considered and compared with existing approaches.
TL;DR: In this paper, a review of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system is presented.
Abstract: Monolithically integrated optoelectronic circuits combine optical devices such as light sources (injection lasers and light emitting diodes) and optical detectors with solid-state semiconductor devices such as field effect transistors, bipolar transistors, and others on a single semiconductor crystal. Here we review some of the integrated circuits that have been realized and discuss the laser structures suited for integration with emphasis on the InGaAsP/InP material system. Some results of high frequency modulation and performance of integrated devices are discussed.
TL;DR: In this article, a GaAlAs buried-heterostructure laser has been integrated with a bipolar phototransistor, and the heterojunction transistor was formed by the regrowth of the burying layers of the laser.
Abstract: A GaAlAs buried‐heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common‐emitter current gains for the phototransistor of 100–400 and light responsivity of 75 A/W (for wavelengths of 0.82 μm) at collector current levels of 15 mA were obtained.
TL;DR: In this article, the switching characteristics of a bistable injection laser with very large hysteresis were examined and it was shown that the switching time can be reduced by increasing the overdrive current.
Abstract: The switching characteristics of a bistable injection laser with very large hysteresis is examined. Switch‐on delays are shown to exhibit a ’’critical’’ part and a ’’noncritical’’ part, both of which can be reduced by increasing the overdrive current. It is possible to obtain fairly fast switching time (<20 ns) with a strong overdrive. Nominal delays of 100–200 ns result under moderate overdrives. These long time scales are due to long carrier lifetimes in the carrier‐depleted absorption section, a property intrinsic to these bistable injection lasers.
TL;DR: In this paper, the problem of spontaneous emission into guided modes with curved wavefronts is examined quantum mechanically and a classical result due to Petermann, which shows an increased emission rate relative to modes with planar phase fronts, is corroborated.
Abstract: The problem of spontaneous emission into guided modes with curved wavefronts is examined quantum mechanically. A classical result due to Petermann, which shows an increased emission rate relative to modes with planar phase fronts, is corroborated.
TL;DR: In this paper, the interband Auger recombination lifetimes of two Auger processes have been calculated to correlate measured threshold current densities and carrier lifetimes for InGaAsP/InP lasers.
Abstract: The interband Auger recombination lifetimes of two Auger processes have been calculated to correlate measured threshold current densities and carrier lifetimes for InGaAsP and InGaAsSb lasers. Good aggreement with experimental data was obtained for lasers with low nominal threshold current densities. These results demonstrate the importance of Auger recombination in the threshold characteristics of InGaAsP/InP lasers.