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Bhaswar Chakrabarti

Researcher at University of Chicago

Publications -  41
Citations -  1101

Bhaswar Chakrabarti is an academic researcher from University of Chicago. The author has contributed to research in topics: Memristor & Resistive random-access memory. The author has an hindex of 12, co-authored 30 publications receiving 913 citations. Previous affiliations of Bhaswar Chakrabarti include Argonne National Laboratory & Georgia Institute of Technology.

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Journal ArticleDOI

Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits.

TL;DR: In this paper, the authors demonstrate a neural network using a transistor-free passive memristor crossbar array, offering potential circuit miniaturisation and energy savings, and demonstrate operation of one-hidden layer perceptron classifier entirely in the mixed-signal integrated hardware, comprised of two passive 20 × 20 metal-oxide memristive crossbar arrays, board-integrated with discrete conventional components.
Posted Content

Implementation of Multilayer Perceptron Network with Highly Uniform Passive Memristive Crossbar Circuits

TL;DR: A neural network is demonstrated using a transistor-free passive memristor crossbar array, offering potential circuit miniaturisation and energy savings, and achieves classification fidelity within 3% of that obtained in simulations, when using ex-situ training.
Journal ArticleDOI

3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications

TL;DR: The integrated crosspoint memristors are optimized for analog computing applications allowing successful forming and switching of all 200 devices in the demonstrated crossbar circuit, and, most importantly, precise tuning of the devices' conductance values within the dynamic range of operation.
Journal ArticleDOI

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit.

TL;DR: This work demonstrates a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate, which is the first demonstration of a functional 3DCMOL hybrid circuit.
Proceedings ArticleDOI

Random telegraph noise (RTN) in scaled RRAM devices

TL;DR: In this article, the random telegraph noise (RTN) related read instability in resistive random access memory (RRAM) was evaluated by employing the RTN peak-to-peak (P-p) amplitude as a figure of merit (FoM).