Chiu-Wang Lien

TL;DR: In this paper, the memory performance of hafnium oxide (HfOx)-based resistive memory containing a thin reactive Ti buffer layer can be greatly improved due to the excellent ability of Ti to absorb oxygen atoms from the HfOx film after post-metal annealing.

TL;DR: In this article, a novel resistive memory with the TiN/Ti/HfO x /TiN stack is proposed and fully integrated with 0.18 µm CMOS technology.

TL;DR: A novel differential p-channel logic-compatible multiple-time programmable (MTP) memory cell that performs differential read to increase the on/off window, and a novel self-recovery operation is implemented to boost the floating gate level, thus avoiding the charge-loss problem due to the thin gate oxide requirement in advance logic nonvolatile memory applications.

TL;DR: A new fully logic process compatible 2T multitime programmable (MTP) memory cell has been introduced for embedded logic nonvolatile memory (NVM) applications and adopts a novel contact coupling gate structure as an additional control gate for highly efficient operation and high-density memory applications.

TL;DR: Very small cell size, fast programming speed, and superior reliability characteristic make the new contact coupling gate MTP cell be one of the most promising solutions in advanced logic NVM application.