Dennis Lin

TL;DR: In this article, a review of the most commonly used germanium surface passivation methods (e.g., epi-Si passivation, surface oxidation and/or nitridation, and S-passivation) with various high-k dielectrics is presented.

TL;DR: This work shows a path to enable doping-free low-power electronics on 2D semiconductors, going beyond the concept of unipolar physically doped devices, while suggesting a road to achieve higher computational densities in two-dimensional electronics.

TL;DR: The impact of border traps on high-k gate oxides on the operation and reliability of high-mobility channel transistors has been discussed in this article, with particular emphasis on the development of novel or adapted measurement techniques such as AC transconductance dispersion or trap spectroscopy by charge injection and sensing.

TL;DR: The use of germanium and III-V compounds as potential replacements for silicon channels has attracted lots of attention for its application in advanced pMOS devices as discussed by the authors, and Indium gallium arsenide compounds, with their intrinsically superior electron mobility and high saturation velocity, are considered as a candidate for nMOS device beyond 14 nm node technology.

TL;DR: In this article, a common gate stack (CGS) solution is proposed for the first time and demonstrated on Ge and InGaAs channels with combined hole and electron field-effect mobility values up to 400cm2/eV-s and 1300cm2 /eVs.