D. De Ceuster

TL;DR: In this article, design guidelines using two analog parameters (Early voltage and transconductance to drain current ratio) are proposed for correct operation of silicon-on-insulator (SOI) CMOS operational amplifiers (opamp) at elevated temperature up to 300/spl deg/C.

TL;DR: In this article, the authors demonstrate that FD SOI MOSFETs exhibit near-ideal body factor, sub-threshold slope and current drive properties for mixed fabrication and operation under low supply voltage of analog, digital and microwave components.

TL;DR: In this paper, the performance of micropower single-stage CMOS OTAs implemented in SOI or bulk technologies is compared and the improvements resulting from the superior device characteristics of fully-depleted SOI MOSFETs are discussed.

TL;DR: In this paper, a recessed LOCOS technique instead of a standard LOCOS process was proposed to eliminate parasitic edge transistor leakage in thin-film SOI MOSFETs.

TL;DR: In this article, the serial-parallel association of SOI MOSFETs proves to be useful for increasing the breakdown voltage and the early voltage of transistor structures, allowing one to realize current mirrors with an output-to-input current ratio close to unity in the weak, moderate and strong inversion regimes of the MOS FETs.