D
David M. Fried
Researcher at IBM
Publications - 83
Citations - 4169
David M. Fried is an academic researcher from IBM. The author has contributed to research in topics: CMOS & Transistor. The author has an hindex of 29, co-authored 83 publications receiving 4096 citations. Previous affiliations of David M. Fried include Cornell University & GlobalFoundries.
Papers
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Proceedings ArticleDOI
Stable SRAM cell design for the 32 nm node and beyond
Leland Chang,David M. Fried,John M. Hergenrother,Jeffrey W. Sleight,R.H. Dennard,Robert K. Montoye,Lidija Sekaric,Sharee J. McNab,Anna W. Topol,C.D. Adams,Kathryn W. Guarini,Wilfried Haensch +11 more
TL;DR: This work demonstrates the smallest 6T and full 8T-SRAM cells to date and provides a much greater enhancement in stability by eliminating cell disturbs during a read access, thus facilitating continued technology scaling.
Journal ArticleDOI
Extension and source/drain design for high-performance FinFET devices
J. Kedzierski,Meikei Ieong,E.J. Nowak,Thomas S. Kanarsky,Ying Zhang,Ronnen Andrew Roy,Diane C. Boyd,David M. Fried,Hon-Sum Philip Wong +8 more
TL;DR: In this article, double gate devices based upon the FinFET architecture are fabricated, with gate lengths as small as 30 nm, with particular attention given to minimizing the parasitic series resistance.
Patent
Fin fet devices from bulk semiconductor and method for forming
TL;DR: In this article, a device structure and method for forming fin (210) Field Effect Transistors (FETs) from bulk semiconductor wafers (200) while providing improved wafer to wafer device uniformity.
Patent
Finfet SRAM cell using low mobility plane for cell stability and method for forming
TL;DR: In this paper, the authors presented a method for forming the same that results in Fin Field Effect Transistors having different gains without negatively impacting device density, which is of particular application to the design and fabrication of a Static Random Access Memory (SRAM) cell.
Patent
Strained Fin FETs structure and method
TL;DR: In this paper, a method and structure for a transistor that includes an insulator and a silicon structure on the insulator is presented, where a first gate is positioned on a first side of the central portion of the silicon structure.