D
Dominique Carisetti
Researcher at Philips
Publications - 19
Citations - 207
Dominique Carisetti is an academic researcher from Philips. The author has contributed to research in topics: Transistor & High-electron-mobility transistor. The author has an hindex of 7, co-authored 17 publications receiving 183 citations.
Papers
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Journal ArticleDOI
Degradation of TiAlNiAu as ohmic contact metal for GaN HEMTs
TL;DR: Ti/Al/Ni/Au stack is widely used to form ohmic contact on GaN based semiconductor material but long term thermal storage tests have shown a dramatic degradation of this metal when stored more than 100 h at temperatures above 340 °C.
Journal ArticleDOI
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques.
Moshine Bouya,Nathalie Malbert,Nathalie Labat,Dominique Carisetti,Philippe Perdu,Jean-Claude Clement,Benoit Lambert,Michel Bonnet +7 more
TL;DR: The spectral analysis of the light emission in the visible near infrared spectrum shows a bell-shape with superimposed distinct emission peaks that suggest that the electroluminescence (EL) signal is due to the direct intraband of electrons and inelastic intraband transition of electrons due to scattering by charged centres.
Journal ArticleDOI
Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions
Lény Baczkowski,Jean-Claude Jacquet,Olivier Jardel,Chistophe Gaquiere,Myriam Moreau,Dominique Carisetti,Laurent Brunel,Franck Vouzelaud,Yves Mancuso +8 more
TL;DR: In this article, a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave was presented.
Patent
Method of manufacturing by autoalignment an integrated semiconductor device comprising at least the formation of an encapsulated first electrode contact provided with spacers and of a second autoaligned electrode contact on the former
Daniel Selle,Dominique Carisetti +1 more
TL;DR: In this paper, a method of manufacturing by autoalignment an integrated semiconductor device is set forth comprising the realization on respective semiconductor layers of a first encapsulated electrode contact E provided with spacers and of a second autoaligned electrode contact B on the first contact thus equipped.
Journal ArticleDOI
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC
Moshine Bouya,Dominique Carisetti,Nathalie Malbert,Nathalie Labat,Philippe Perdu,Jean-Claude Clement,Michel Bonnet,Gerard Pataut +7 more
TL;DR: A new method of passivation control by electroluminescence (EL) in 0.15 μm AlGaN/GaN HEMT reveals some modification of the electric field distribution in the gate-drain space probably induced by traps located at the passivation/semiconductor interface.