Journal ArticleDOI
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC
Moshine Bouya,Dominique Carisetti,Nathalie Malbert,Nathalie Labat,Philippe Perdu,Jean-Claude Clement,Michel Bonnet,Gerard Pataut +7 more
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TLDR
A new method of passivation control by electroluminescence (EL) in 0.15 μm AlGaN/GaN HEMT reveals some modification of the electric field distribution in the gate-drain space probably induced by traps located at the passivation/semiconductor interface.About:
This article is published in Microelectronics Reliability.The article was published on 2007-09-01. It has received 11 citations till now. The article focuses on the topics: Passivation & Light emission.read more
Citations
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Journal ArticleDOI
Breakdown mechanisms in AlGaN/GaN HEMTs: An overview
TL;DR: In this article, the physical mechanisms responsible for breakdown current in AlGaN/GaN high electron mobility transistors (HEMTs) were reviewed and compared through a critical comparison between experimental data and previously published results.
Journal ArticleDOI
Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications
Matteo Meneghini,Davide Bisi,Denis Marcon,Steve Stoffels,Marleen Van Hove,Tian-Li Wu,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni +8 more
TL;DR: In this article, an extensive analysis of the trapping processes and of the reliability of experimental AlGaN/GaN MIS-HEMTs, grown on silicon substrate, is presented, based on combined pulsed characterization, transient investigation, breakdown, and reverse-bias stress tests, and provides the following, relevant, information: exposure to high gate-drain reverse bias may result in a recoverable increase in the on-resistance (RON), and in a slight shift in threshold voltage; devices with a longer gate-drone distance show a stronger increase in RON,
Journal ArticleDOI
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors
Matteo Meneghini,Antonio Stocco,Nicolo Ronchi,Francesca Rossi,Giancarlo Salviati,Gaudenzio Meneghesso,Enrico Zanoni +6 more
TL;DR: In this article, an extensive analysis of the electroluminescence spectra of GaN-based high-electron mobility transistors (HEMT) submitted to different bias regimes is presented.
Journal ArticleDOI
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques.
Moshine Bouya,Nathalie Malbert,Nathalie Labat,Dominique Carisetti,Philippe Perdu,Jean-Claude Clement,Benoit Lambert,Michel Bonnet +7 more
TL;DR: The spectral analysis of the light emission in the visible near infrared spectrum shows a bell-shape with superimposed distinct emission peaks that suggest that the electroluminescence (EL) signal is due to the direct intraband of electrons and inelastic intraband transition of electrons due to scattering by charged centres.
Proceedings ArticleDOI
Influence of GaN cap on robustness of AlGaN/GaN HEMTs
Ponky Ivo,Arkadiusz Glowacki,Reza Pazirandeh,Eldad Bahat-Treidel,Richard Lossy,Joachim Würfl,Christian Boit,Günther Tränkle +7 more
TL;DR: In this paper, DC-step-stress tests of GaN HEMTs have been performed on wafers with and without GaN-cap, and it has been found that wafer with GaN cap show much higher critical voltages as compared to non-capped epitaxial designs.
References
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Journal ArticleDOI
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
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The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's on the same wafer.
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The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN/AlGaN
TL;DR: In this article, the authors present the results of experimental and theoretical studies concerning the temperature dependence of electron mobility in a two-dimensional electron gas (2DEG) confined at the GaN/AlGaN interface.
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Effects of surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors
TL;DR: In this paper, the effect of Si3N4 surface passivation on breakdown of AlGaN/GaN high-electron-mobility transistors was studied in detail by investigating dependences of the off-state breakdown voltage on temperature and gate reverse current, and by measuring electroluminescence distribution.
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Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor
TL;DR: In this article, the effect of SiN passivation of the surface of AlGaN/GaN transistors is reported, and the discrepancy in the DLTS peak amplitude is explained by the effect on the surface traps and underlines the surface nature of the major defect noticed in the device.