Dominique Carisetti

TL;DR: Ti/Al/Ni/Au stack is widely used to form ohmic contact on GaN based semiconductor material but long term thermal storage tests have shown a dramatic degradation of this metal when stored more than 100 h at temperatures above 340 °C.

TL;DR: The spectral analysis of the light emission in the visible near infrared spectrum shows a bell-shape with superimposed distinct emission peaks that suggest that the electroluminescence (EL) signal is due to the direct intraband of electrons and inelastic intraband transition of electrons due to scattering by charged centres.

TL;DR: In this article, a complete thermal characterization of AlGaN/gallium nitride (GaN) on silicon carbide high electron-mobility transistors (HEMTs) when devices are operating in dc bias, pulsed, and continuous wave was presented.

TL;DR: In this paper, a method of manufacturing by autoalignment an integrated semiconductor device is set forth comprising the realization on respective semiconductor layers of a first encapsulated electrode contact E provided with spacers and of a second autoaligned electrode contact B on the first contact thus equipped.

TL;DR: A new method of passivation control by electroluminescence (EL) in 0.15 μm AlGaN/GaN HEMT reveals some modification of the electric field distribution in the gate-drain space probably induced by traps located at the passivation/semiconductor interface.