Dustin Z. Austin

TL;DR: In this paper, the atomic layer deposition (ALD) processes for ruthenium (Ru) and Ru oxide (RuO2) using a zero-oxidation state liquid precursor, η4-2,3-dimethylbutadiene (Ru(DMBD)(CO)3), were reported.

TL;DR: In this article, the authors present a review of high-k and low-k dielectric materials and their application in various metal-insulator-metal (MIM) structures such as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements.

TL;DR: In this article, the cancelling effect between the positive quadratic voltage coefficient of capacitance (VCC) of Al2O3 and the negative VCC of SiO2 was employed to achieve the International Technology Roadmap for Semiconductors 2020 projections for capacitance, leakage current density, and voltage nonlinearity.

TL;DR: In this paper, the influence of the metal/dielectric interface, in the absence of a significant interfacial layer oxide (ILO), on the voltage nonlinearity of capacitance for metal-insulator-metal capacitors was examined.

TL;DR: In this article, Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe2iPr)3 and H2O at deposition temperatures between 90 and 270°C on Si3N4, TaN, and TiN substrates.