E
Eugene A. Fitzgerald
Researcher at Massachusetts Institute of Technology
Publications - 118
Citations - 4386
Eugene A. Fitzgerald is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Dislocation & Silicon. The author has an hindex of 37, co-authored 118 publications receiving 4258 citations. Previous affiliations of Eugene A. Fitzgerald include Singapore–MIT alliance & National University of Singapore.
Papers
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Journal ArticleDOI
Strained Ge channel p-type metal–oxide–semiconductor field-effect transistors grown on Si1−xGex/Si virtual substrates
Minjoo L. Lee,Christopher W. Leitz,Z. Y. Cheng,Arthur J. Pitera,Thomas A. Langdo,Matthew T. Currie,Gianni Taraschi,Eugene A. Fitzgerald,Dimitri A. Antoniadis +8 more
TL;DR: In this article, a strained Ge channel p-type metal-oxide-semiconductor field effect transistors (p-MOSFETs) were fabricated on Si0.3Ge0.7 virtual substrates.
Journal ArticleDOI
Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates
Zhiyuan Cheng,Matthew T. Currie,Christopher W. Leitz,Gianni Taraschi,Eugene A. Fitzgerald,J.L. Hoyt,D.A. Antoniadas +6 more
TL;DR: In this article, the authors demonstrate electron mobility enhancement in strained-Si n-MOSFETs fabricated on relaxed Si/sub 1-x/Ge/sub x/-on-insulator (SGOI) substrates with a high Ge content of 25%.
Journal ArticleDOI
Dislocation dynamics in relaxed graded composition semiconductors
Eugene A. Fitzgerald,Andrew Y. Kim,Matthew T. Currie,Thomas A. Langdo,Gianni Taraschi,Mayank T. Bulsara +5 more
TL;DR: In this paper, the authors show that the dislocation dynamics model is in general applicable to graded layers in any material system as long as dislocation flow is not impeded by branch defects.
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High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers
TL;DR: In this paper, the authors have fabricated integrated Ge photodiodes on a graded optimized relaxed SiGe buffer on silicon substrates, and the dark current in the Ge mesa diodes, Js=0.15 mA/cm2, is close to the theoretical reverse saturation current and is a record low for Ge diodors integrated on Si substrates.
Journal ArticleDOI
Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x<y) virtual substrates
Christopher W. Leitz,Matthew T. Currie,Minjoo L. Lee,Z. Y. Cheng,D.A. Antoniadis,Eugene A. Fitzgerald +5 more
TL;DR: In this article, the authors achieved peak hole mobility enhancement factors of 5.15 over bulk Si in metal-oxide-semiconductor field effect transistors (MOSFETs) by combining tensile strained Si surface channels and compressively strained 80% Ge buried channels grown on relaxed 50% Ge virtual substrates.