Eugene Deyneka

TL;DR: In this article, the growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined, and methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxially layers are discussed.

TL;DR: In this paper, combined techniques of KOH etching and cross-polarizer inspections were used to confirm the absence of micropipes in 4HN-SiC wafers.

TL;DR: In this article, a 6x150mm/10x100mm Warm-Wall Planetary Vapor-Phase Epitaxial (VPE) Reactor was used for SiC epitaxial growth.

TL;DR: In this article, the authors used selective etch techniques and an optical surface analyzer to inspect defects on SiC wafers and achieved repeatable production of thick epitaxial layers with defect densities of less than 1 cm-2 and as low as 0.2 cm-1.

TL;DR: In this article, the authors presented definite correlations between specific types of dislocations identified via Synchrotron White Beam X-Ray Topography (SWBXRT) and identified via selective etching of 4H-SiC substrates.