G
Giorgio Vannini
Researcher at University of Ferrara
Publications - 214
Citations - 2940
Giorgio Vannini is an academic researcher from University of Ferrara. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 27, co-authored 214 publications receiving 2588 citations. Previous affiliations of Giorgio Vannini include University of Bologna & Katholieke Universiteit Leuven.
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Journal ArticleDOI
Nonlinear RF device modelling in the presence of low-frequency dispersive phenomena: Research Articles
Fabio Filicori,Alberto Santarelli,Pier Andrea Traverso,Antonio Raffo,Giorgio Vannini,M. Pagani +5 more
TL;DR: Theoretical and practical issues concerning the nonlinear dynamic modeling of electron devices are discussed in this paper, where all the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical derivation.
Journal ArticleDOI
In-deep insight into the extrinsic capacitance impact on GaN HEMT modeling at millimeter-wave band
Giovanni Crupi,Dominique Schreurs,Alina Caddemi,Antonio Raffo,Frederik Vanaverbeke,Gustavo Avolio,Giorgio Vannini,Walter De Raedt +7 more
TL;DR: An extensive experimental and mathematical analysis based on a comparative study of this behavior for GaN high electron mobility transistor (HEMT) devices up to the millimeter-wave range is aimed at and the results of this analysis can be applied for estimating the extrinsic capacitances.
Proceedings ArticleDOI
VCO behavioral modeling based on the nonlinear integral approach
TL;DR: The new VCO model allows a great accuracy in the description of dynamic nonlinear operations and enables many limitations of existing modelling approaches to be overcome and makes it suitable for system-level simulations.
Proceedings ArticleDOI
Empirical modeling of low-frequency dispersive effects due to traps and thermal phenomena in III-V FETs
TL;DR: In this paper, an empirical approach is proposed which accounts for low-frequency dispersive phenomena due to surface state densities, deep level traps and device heating, in the modeling of the drain current response of III-V FETs.
Stability analysis of multi-transistor microwave power amplifiers
TL;DR: In this article, a simplified approach for microwave circuit analysis using conventional linear tools is proposed, which can be applied to microwave circuits and can be used to cope with the stability analysis of transistors.