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Giorgio Vannini

Researcher at University of Ferrara

Publications -  214
Citations -  2940

Giorgio Vannini is an academic researcher from University of Ferrara. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 27, co-authored 214 publications receiving 2588 citations. Previous affiliations of Giorgio Vannini include University of Bologna & Katholieke Universiteit Leuven.

Papers
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Journal ArticleDOI

GaN Ku-band low-noise amplifier design including RF life test

TL;DR: In this paper, the authors describe the design and characterization of a Ku-band monolithic microwave integrated circuit low-noise amplifier for telecom space applications, exploiting an industrial aluminum gallium nitride (AlGaN)/GaN high electron mobility transistor (HEMT) on silicon carbide process.
Book ChapterDOI

Nonlinear Embedding and De-embedding: Theory and Applications

TL;DR: In this article, two recently proposed characterization techniques of microwave transistors oriented to high-frequency power amplifier (PA) design are discussed, along with evidence of their advantages with respect to conventional design approaches in terms of power and frequency handling capability.
Proceedings ArticleDOI

High-efficiency broadband power amplifier design technique based on a measured-load-line approach

TL;DR: An innovative power amplifier design technique oriented to microwave applications which require both high efficiency and large bandwidth is presented, based on a recently proposed technique which achieves the same level of accuracy provided by expensive nonlinear setups operating at microwave frequencies.
Proceedings ArticleDOI

An Ultra-Wideband Setup to Monitor Antenna-Impedance Variations in Low-Cost IoT Transmitters

TL;DR: An innovative ultra-wideband setup to detect real-time variations in antenna impedance in transmitters oriented to Internet of Things and 5G applications is presented and validated by means of multi-tone measurements at microwave frequencies.
Journal ArticleDOI

Nonlinear modeling of InP devices for W-band applications

TL;DR: In this paper, a distributed modeling of extrinsic parasitic effects in electron devices is used for the very first time in conjunction with a lumped equivalent circuit model for the intrinsic device.