G
Giorgio Vannini
Researcher at University of Ferrara
Publications - 214
Citations - 2940
Giorgio Vannini is an academic researcher from University of Ferrara. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 27, co-authored 214 publications receiving 2588 citations. Previous affiliations of Giorgio Vannini include University of Bologna & Katholieke Universiteit Leuven.
Papers
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Implementation of non-conventional nonlinear models for electron devices in commercial CAD tools
TL;DR: The paper provides useful hints and points out the main limitations which can be encountered in the implementation of non-conventional electron device models.
Proceedings Article
Time-domain waveform based extraction of FinFET nonlinear I–V model
Dominique Schreurs,Gustavo Avolio,Antonio Raffo,Giorgio Vannini,Giovanni Crupi,Alina Caddemi +5 more
TL;DR: In this paper, a straightforward approach to model the dynamic I-V characteristics of microwave FET transistors is presented, which is used for predicting accurately the device behavior under realistic operating conditions, namely large-signal operation.
Proceedings ArticleDOI
75-VDC GaN technology investigation from a degradation perspective
Francesco Trevisan,Antonio Raffo,Gianni Bosi,Valeria Vadala,Giorgio Vannini,Gabriele Formicone,Jeff Burger,James Custer +7 more
TL;DR: In this article, an automated measurement system for the investigation of degradation phenomena in GaN FETs is presented, which is able to perform both static and dynamic stress cycles under actual device operation, gathering useful information strictly related to the health of the device.
Simplified validation of non-linear models for micro- and millimeter-wave electron devices
TL;DR: In this article, an approach to verify large-signal model accuracy is discussed, which is simply based on the comparison between de-embedded measurements and model predictions of Y-parameters versus the bias voltages at the intrinsic device ports.
Proceedings Article
Advanced Modelling Techniques Enabling E-Band Power Amplifier Design for 5G Backhauling
Valeria Vadala,Antonio Raffo,Alberto Colzani,Matteo A. Fumagalli,Giuseppe Sivverini,Gianni Bosi,Giorgio Vannini +6 more
TL;DR: In this article, a nonlinear transistor model extraction technique oriented to E-band power amplifier design is discussed, based on analytical functions and look-up-tables, respectively.