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Giorgio Vannini

Researcher at University of Ferrara

Publications -  214
Citations -  2940

Giorgio Vannini is an academic researcher from University of Ferrara. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 27, co-authored 214 publications receiving 2588 citations. Previous affiliations of Giorgio Vannini include University of Bologna & Katholieke Universiteit Leuven.

Papers
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Investigation on the non-quasi-static effect implementation for millimeter-wave FET models

Giovanni Crupi, +4 more
- 01 Jan 2010 - 
TL;DR: This study clearly proves that best choice among these model representations depends on the specific device technology besides the investigated frequency range.
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Millimeter-wave FET modeling using on-wafer measurements and EM simulation

Alessandro Cidronali, +4 more
- 07 Aug 2002 - 
TL;DR: In this article, an empirical distributed FET model is adopted that can be identified on the basis of conventional S-parameter measurements and electromagnetic simulations of the device layout, which enables millimeter-wave small-signal Sparameters to be predicted as a function of device periphery and number of gate fingers.
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‘Backgating’ model including self-heating for low-frequency dispersive effects in III-V FETs

Alberto Santarelli, +3 more
- 01 Oct 1998 - 
TL;DR: In this paper, a new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors.
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Nonlinear RF device modelling in the presence of low‐frequency dispersive phenomena

Fabio Filicori, +5 more
- 01 Jan 2006 - 
TL;DR: Theoretical and practical issues concerning the nonlinear dynamic modeling of electron devices are discussed in this article, where all the different dynamic phenomena, which are important for the description of the device behaviour, are comprehensively dealt with by means of a unified mathematical derivation.
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Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique

Gustavo Avolio, +7 more
- 13 Oct 2014 - 
TL;DR: In this paper, the nonlinear model of a microwave transistor is extracted from large-signal measurements acquired under "dynamic-bias" operation, where the transistor is driven by low-frequency large signals while a high-frequency tickle is applied on top of them.