G
Giorgio Vannini
Researcher at University of Ferrara
Publications - 214
Citations - 2940
Giorgio Vannini is an academic researcher from University of Ferrara. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 27, co-authored 214 publications receiving 2588 citations. Previous affiliations of Giorgio Vannini include University of Bologna & Katholieke Universiteit Leuven.
Papers
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Proceedings ArticleDOI
Scalable equivalent circuit PHEMT modelling using an EM-based parasitic network description
TL;DR: It is shown how the adoption of a distributed instead of a lumped description leads to a more accurate equivalent-circuit-based electron device model.
Proceedings ArticleDOI
A novel technique for the extraction of nonlinear model for microwave transistors under dynamic-bias operation
Gustavo Avolio,Antonio Raffo,Iltcho Angelov,Giovanni Crupi,Giorgio Vannini,Dominique Schreurs +5 more
TL;DR: In this article, a nonlinear model for microwave transistors is extracted from nonlinear measurements obtained by simultaneously driving the device under test with low and high-frequency excitations, and good agreement is obtained between model predictions and experimental data.
Journal ArticleDOI
Frequency stability in resonator-stabilized oscillators
Fabio Filicori,Giorgio Vannini +1 more
TL;DR: In this paper, a simplified stability analysis of resonator-stabilized oscillators is carried out by using the describing function approach, and a criterion for the evaluation and optimization of the frequency stabilization introduction in an oscillator by a resonating element with a large quality factor is proposed.
Proceedings ArticleDOI
On-wafer I/V measurement setup for the characterization of low-frequency dispersion in electron devices
TL;DR: In this article, a large-signal dynamic modeling of 111-V FETs is presented which is based on simple low-frequency sinusoidal excitations and it is easily detectable with conventional general-purpose lab measurements.
Proceedings ArticleDOI
Modeling the effects of traps on the I-V characteristics of GaAs MESFETs
TL;DR: In this article, the effects of deep level traps on the large-signal I-V characteristics of GaAs MESFETs were investigated by means of measurements and physics-based device simulations.