Giorgio Vannini

TL;DR: In this article, a new technique is developed for determining analytically a millimeter-wave small-signal equivalent circuit model of GaAs pseudomorphic HEMTs from scattering parameter measurements.

TL;DR: In this article, the experimental characterization of low-frequency dispersion (i.e., long-term memory effects) affecting microwave GaN HEMTs is carried out by adopting a new nonlinear measurement system, which is based on lowfrequency multiharmonic signal sources.

TL;DR: In this article, a neural approach for extracting a multi-bias model of a gallium nitride high electron-mobility transistors including the dependence on the ambient temperature is presented.

TL;DR: In this paper, a new approach for the definition and identification of a transistor model suitable for low-noise amplifier (LNA) design is presented, which is based on a lumped element parasitic network and a black-box intrinsic device, which are both identified on the basis of full-wave electromagnetic simulations, as well as noise and parameter measurements.

TL;DR: In this paper, a new model formulation is presented that correctly accounts for low-frequency dispersion (i.e., trapping and thermal phenomena) affecting field effect transistors (FETs).