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Giorgio Vannini

Researcher at University of Ferrara

Publications -  214
Citations -  2940

Giorgio Vannini is an academic researcher from University of Ferrara. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 27, co-authored 214 publications receiving 2588 citations. Previous affiliations of Giorgio Vannini include University of Bologna & Katholieke Universiteit Leuven.

Papers
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A New Study on the Temperature and Bias Dependence of the Kink Effects in S22 and h21 for the GaN HEMT Technology

TL;DR: In this paper, the authors investigated the origin of the kink effects affecting the output reflection coefficient (S22) and the short-circuit current gain (h21) of solid-state electronic devices.
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Mathematical approaches to electron device modelling for non‐linear microwave circuit design: State of the art and present trends

TL;DR: This paper deals with the problem of mathematical modelling of electron devices operating under large-signal conditions at microwave frequencies, and mathematical models based on the describing-function and Volterra-series approach are considered also taking into account their application to circuit design.
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Scalability of Multifinger HEMT Performance

TL;DR: This letter aims at investigating the impact of the gate width on the microwave field effect transistor (FET) performance, focusing on the GaAs high-electron-mobility transistor (HEMT) technology as a case study.
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A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations

TL;DR: For the first time, an accurate modeling technique oriented to multicell devices is described, which allows one to extract a compact model of aMulticell transistor showing similar prediction accuracy of the unit-cell one.
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Waveform engineering: State‐of‐the‐art and future trends (invited paper)

TL;DR: In this article, a comprehensive analysis of the waveform-engineering based design techniques is reported, paying particular attention to the advantages and drawbacks associated with each approach, with the focus on the model-based and measurement-based approaches.