G
Giorgio Vannini
Researcher at University of Ferrara
Publications - 214
Citations - 2940
Giorgio Vannini is an academic researcher from University of Ferrara. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 27, co-authored 214 publications receiving 2588 citations. Previous affiliations of Giorgio Vannini include University of Bologna & Katholieke Universiteit Leuven.
Papers
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A signal-theory based approach for the approximation of electron device characteristics
TL;DR: A new approach to the approximation of nonlinear characteristics for look-up table based electron device models is proposed that relies on the strong analogy between signal sampling and characteristic measurements over a discrete grid of bias points to guarantee accurate reproduction both of non linear characteristics and associated derivatives.
Book ChapterDOI
Electromagnetic-Analysis-Based Transistor De-embedding and Related Radio-Frequency Amplifier Design
TL;DR: In this paper, the authors describe methodologies and techniques for de-embedding device measurements from extrinsic measurements by characterizing the parasitic network surrounding the intrinsic device, through the use of a 3D physical model of the network and its electromagnetic (EM) analysis.
Modelling of low-frequency dispersive effects in GaAs and InP HEMTs
Alberto Santarelli,Giorgio Vannini,Mattia Borgarino,Roberto Menozzi,Yves Baeyens,Koen van der Zanden +5 more
TL;DR: In this article, a previously proposed approach for modeling the dispersive effects in III-V FET devices is applied to InP and GaAs HEMTs in order to verify its validity also for heterostructure-based devices and to confirm its technology independence.
Proceedings Article
Non-quasi-static modeling of the intrinsic Y 22 for GaN, Si, and GaAs mm-wave FET technologies
Giovanni Crupi,Alina Caddemi,Dominique Schreurs,Antonio Raffo,Gustavo Avolio,Seyed Majid Homayouni,Giorgio Vannini +6 more
TL;DR: In this article, the authors investigated the non-quasi-static effects for modeling the intrinsic short circuit output admittance for FETs based on gallium nitride, silicon, and gallium arsenide technologies.
Proceedings ArticleDOI
Empowering GaN-Si HEMT Nonlinear Modelling for Doherty Power Amplifier Design
TL;DR: This work investigates the possibility of achieving the required level of accuracy for the transistor current-generator model using a set of measurements performed under the different classes of operation that mimic realistic device operation and uses them for the model optimization.