Giorgio Vannini

TL;DR: In this paper, a de-embedding technique oriented to the determination of FET I-V dynamic characteristics is reported, which exploits high-frequency large-signal measurements and a model based description of the reactive nonlinearities.

TL;DR: In this paper, the authors describe the design and implementation of two hybrid high power amplifiers at the L band for a space application, which represent prototype test vehicles for a larger hybrid amplifier to be used as the final power stage in the transmitting chain of a T/R module of an L-band SAR antenna for earth observation.

TL;DR: An approach to the modelling of microwave and millimetre-wave FETs based on electromagnetic field theory and semiconductor physics is introduced and the described non-linear model relates the geometrical, material and process parameters to the device electrical performance.

TL;DR: In this paper, a new technique for drawing load-pull contours is presented which jointly exploits both large-signal low-frequency I/V device measurements and a nonlinear capacitance-based model, the latter one being obtained on the basis of bias-and frequency-dependent small-Signal S-parameters.

TL;DR: In this article, a simple and efficient approach for the modelling of low-frequency dispersive phenomena in FETs is presented, based on the definition of a virtual, non-dispersive associated device controlled by equivalent port voltages and it is suitable for modelling based on standard nonlinear dynamic approaches, such as lumped-element equivalent circuits.