Giorgio Vannini

TL;DR: In this article, an identification procedure for an FET analytical model oriented to μm and mm-wave applications is presented, based on low-frequency large-signal measurements to determine with a high level of accuracy the nonlinear current source parameters.

TL;DR: In this article, a measurement set-up is described for the investigation on microwave electron device characteristic time dispersion (or "walkout"), occurring in nonlinear dynamic operation, where the stress procedure is carried out by applying a large-amplitude excitation signal at moderately high frequency at either the input or the output port of the device.

TL;DR: In this article, an approach to verify large-signal model accuracy is discussed, which is simply based on the comparison between de-embedded measurements and model predictions of Y-parameters versus the bias voltages at the intrinsic device ports.

TL;DR: In this article, a simple large-signal measurement setup is presented, which is based on low-frequency sinusoidal excitations and can be easily implemented by means of conventional general-purpose laboratory instrumentation.

TL;DR: A simple and efficient approach is proposed for the intermodulation analysis of nonlinear microwave circuits based on a very mild assumption about the frequency response of the linear part of the circuit.