G
Giorgio Vannini
Researcher at University of Ferrara
Publications - 214
Citations - 2940
Giorgio Vannini is an academic researcher from University of Ferrara. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 27, co-authored 214 publications receiving 2588 citations. Previous affiliations of Giorgio Vannini include University of Bologna & Katholieke Universiteit Leuven.
Papers
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Proceedings Article
GaN HEMT nonlinear characterization for wideband high-power amplifier design
TL;DR: In this article, a low-cost technique for nonlinear characterization of active devices oriented to microwave power amplifier design is presented, based on a recently proposed measurement technique which, by exploiting a direct low-frequency nonlinear electron device characterization in conjunction with a model-based description of the device strictly dynamic nonlinearities, achieves a similar level of accuracy provided by expensive nonlinear measurement setups operating at microwave frequencies.
An Innovative Two-Source Large-Signal Measurement Systemfor the Characterization of Low-Frequency Dispersive Effects in FETs
Antonio Raffo,Valeria Vadala,Pier Andrea Traverso,Alberto Santarelli,Giorgio Vannini,Fabio Filicori +5 more
TL;DR: In this article, an alternative nonlinear measurement setup based on large-signal sinusoidal excitation at low-frequency (e.g., 2 MHz) is proposed.
Proceedings ArticleDOI
Impact of transistor model uncertainty on microwave load-pull simulations
TL;DR: The uncertainty of measurements used for the identification of a transistor nonlinear model is propagated to microwave load-pull simulations and results are presented for a 0.15-μm GaAs pHEMT under class-AB regime at different frequencies of operation.
Proceedings ArticleDOI
EM-based modeling of Cascode FETs suitable for MMIC design
Davide Resca,J.A. Lonac,Rafael Cignani,Antonio Raffo,Alberto Santarelli,Giorgio Vannini,Fabio Filicori +6 more
TL;DR: A distributed approach based on EM simulations is adopted for the modeling of the parasitic network of the Cascode cell, which leads to a well conditioned characterization of the intrinsic devices, which can be used for the modeled of both the common source and the common gate transistors.