Herman Maes

TL;DR: The combination of these results with a low development entry cost shows that the HIMOS cell is a viable candidate for fast-programmable 5V- only (and 3.3V-only) medium-to-high density Flash memories.

TL;DR: In this paper, an in-depth analysis of the write/erase degradation of source-side injection flash EEPROM devices is performed, which reveals two mechanisms underlying this degradation: a decrease of the charge per cycle on the floating gate, accompanied by the series effect of oxide and interface charges locally trapped above the channel.

TL;DR: In this paper, micro Raman spectroscopy (RS) is used to study the crystalline quality and the stresses in the thin superficial silicon layer of Silicon-On-Insulator (SO) materials.

TL;DR: In this article, the breakdown mechanism of 90 nm MOSFET n+/pwell devices is described in detail and modelled with a physics-based equation set, and the newly developed consistent parameter extraction approach allows to overcome the limitations of existing methodologies, which are not applicable for the 90 nm CMOS node device behaviour, and calibrate precisely the snapback models.

TL;DR: In this article, electron diffraction contrast imaging (EDCI) using transmission electron microscopy (TEM) was used to characterize localised strain in a semiconductor laser structure, where the strain in the structure was modelled using finite element calculations, and the EDCI results were simulated using the Simeon software.